LexDanaLexDanabeta
Inventor

Naotaka Hashimoto

Inventor
Koganei, JP

Overview

97→
Patents
1989–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 97 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices17%
H10BElectronic memory devices15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
LOC2610%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
G11CStatic stores7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
C23CCoating metallic material4%
F21KNon-electric light sources using luminescence3%
F21VFunctional features or details of lighting devices or systems thereof3%
PatentTitleYear
RE047293Illuminating apparatus20199,969,496Lighting apparatus and moving object20189,856,021'Lighting apparatus, lighting system, and moving object'20188,858,039'Illuminating apparatus'20148,727,572'Illuminating apparatus'2014D0700375'Light-emitting diode lamp'20148,523,411'Light source device'20138,523,410'Light source device with thermal dissipating members'2013D0684310'Light emitting diode lamp'2013D0683894'Light emitting diode lamp'20138,414,163'Light source apparatus'2013D0679049'Light emitting diode lamp'20138,393,757'Light-bulb type LED lamp and illumination apparatus'20138,246,221'Reflector LED lamp'2012D0660469'Light-emitting diode lamp'2012D0660468'Light-emitting diode lamp'20128,034,715'Method of fabricating semiconductor integrated circuit device'2011D0644781'Light emitting diode lamp'2011D0644782'Light emitting diode lamp'2011D0639997'Light emitting diode lamp'2011D0639498'Light emitting diode lamp'2011D0636925'Light emitting diode lamp'2011D0633249'Light emitting diode lamp'20117,598,558'Method of manufacturing semiconductor integrated circuit device having capacitor element'2009D0597688'Lamp filament'20097,569,457'Method of fabricating semiconductor device'2009D0597687'Lamp filament'2009D0595433'Filament for lamp'2009D0595432'Filament for lamp'20097,553,766'Method of fabricating semiconductor integrated circuit device'2009D0588288'Lamp filament'2009D0588286'Filament for lamp'2009D0588287'Filament for lamp'2009D0586929'Filament for lamp'2009D0581063'Filament for lamp'2008D0581064'Lamp filament'2008D0581062'Lamp filament'2008D0580562'Filament for lamp'2008D0579129'Filament for lamp'2008D0578674'Filament for lamp'20087,323,735'Method of manufacturing semiconductor integrated circuit device having capacitor element'20087,314,830'Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt'20087,314,805'Method for fabricating semiconductor device'20087,214,577'Method of fabricating semiconductor integrated circuit device'20077,199,433'Method of manufacturing semiconductor integrated circuit device having capacitor element'20077,118,983'Method of fabricating semiconductor device'20067,094,655'Method of fabricating semiconductor device'20067,094,642'Method of fabricating semiconductor device'20067,074,665'Method of fabricating semiconductor device'20067,064,040'Method of fabricating semiconductor device'20067,030,449'Semiconductor integrated circuit device having capacitor element'20066,992,446'Halogen lamp with infrared reflective coating and halogen lamp with reflecting mirror and infrared reflective coating'20066,911,125'Thin film producing method and light bulb having such thin film'20056,878,586'Semiconductor memory device'20056,858,484'Method of fabricating semiconductor integrated circuit device'20056,737,712'Method of manufacturing semiconductor integrated circuit device having capacitor element'20046,726,816'Method for forming thin film, spheroid coated with thin film, light bulb using the spheroid and equipment for film formation'20046,693,001'Process for producing semiconductor integrated circuit device'20046,670,251'Method of fabricating semiconductor device'20036,635,330'Method for forming thin film, spheroid coated with thin film, light bulb using the spheroid and equipment for film formation'20036,610,564'Method of fabricating semiconductor device'20036,545,326'Method of fabricating semiconductor device'20036,512,245'Semiconductor integrated circuit device'20036,476,453'Semiconductor integrated circuit device having capacitor element'20026,472,022'Method for forming thin film, spheroid coated with thin film, light bulb using the spheroid and equipment for film formation'20026,396,111'Semiconductor integrated circuit device having capacitor element'20026,307,217'Semiconductor memory device having driver and load MISFETs and capacitor elements'20016,300,206'Method for manufacturing semiconductor device'20016,245,611'Process for manufacturing semiconductor integrated circuit device'20016,030,865'Process for manufacturing semiconductor integrated circuit device'20005,946,548'Method for manufacturing a MISFET device where the conductive film has a thickness'19995,834,851'SRAM having load transistor formed above driver transistor'19985,780,910'SRAM with stacked capacitor spaced from gate electrodes'19985,780,328'Process for producing semiconductor integrated circuit'19985,767,554'Semiconductor integrated circuit device and process for fabricating the same'19985,731,219'Process for fabricating a semiconductor integrated circuit device'19985,700,704'Process for fabricating a semiconductor integrated circuit device'19975,700,705'Semiconductor integrated circuit device'19975,656,836'Semiconductor integrated circuit device and process for fabricating the same'19975,652,457'Semiconductor integrated circuit device and process for fabricating the same'19975,646,423'Semiconductor integrated circuit device'19975,619,055'Semiconductor integrated circuit device'19975,591,998'Semiconductor memory device'19975,583,358'Semiconductor memory device having stacked capacitors'19965,572,480'Semiconductor integrated circuit device and process for fabricating the same'19965,483,083'Semiconductor integrated circuit device'19965,455,438'Semiconductor integrated circuit device in which kink current disturbances of MOS transistors are suppressed'19955,374,576'Method of fabricating stacked capacitor cell memory devices'19945,298,764'Semiconductor memory device having a field effect transistor with a channel formed from a polycrystalline silicon film'19945,296,729'Semiconductor memory device having static random access memory'19945,239,196'SRAM with dual word lines overlapping drive transistor gates'19935,194,749'Semiconductor integrated circuit device'19935,140,389'Semiconductor memory device having stacked capacitor cells'19925,134,581'Highly stable semiconductor memory with a small memory cell area'19925,132,771'Semiconductor memory device having flip-flop circuits'19924,970,564'Semiconductor memory device having stacked capacitor cells'19904,797,717'Semiconductor memory device'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2005Patents assigned to HITACHI LTD (36)· patent assignee history
1989–2005Based in Hachioji, JP· patent location history
1993–2014Patents assigned to HASHIMOTO NAOTAKA (10)· patent assignee history
1998–2011Based in Koganei, JP· patent location history
2002–2019Based in Osaka, JP· patent location history
2003–2009Patents assigned to RENESAS TECH CORP (14)· patent assignee history
2003–2006Based in Takatsuki, JP· patent location history
2008–2019Patents assigned to PANASONIC CORP (32)· patent assignee history
2008–2009Based in Kadoma, JP· patent location history
2012–2014Patents assigned to KAWAGOE SHINYA (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD361989–2005
PANASONIC CORP322008–2019
RENESAS TECH CORP142003–2009
HASHIMOTO NAOTAKAself101993–2014
KAWAGOE SHINYA62012–2014
Locations
LocationPatentsSpan
Koganei, JP301998–2011
Osaka, JP232002–2019
Hachioji, JP211989–2005
Kadoma, JP142008–2009
Takatsuki, JP42003–2006