Inventor

Hideomi Koinuma

Inventor

Tokyo, JP

Overview

34→

Patents

1990–2015

Patent span

Electricity

Primary field (CPC H)

Patents· 34 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary

C30BSingle-crystal growth12%

C23CCoating metallic material9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H10NElectric solid-state devices not otherwise provided for8%

B29CShaping or joining of plastics5%

B29KIndexing scheme associated with subclasses b29b, b29c or b29d, relating to moulding materials or to materials for moulds, reinforcements, fillers or preformed parts, e.g. inserts5%

H01JElectric discharge tubes or discharge lamps5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

Y10TTechnical subjects covered by former us classification5%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry4%

PatentTitleYear

9,157,144'Masking mechanism for film forming apparatus'2015 8,377,211'Device for vacuum processing'2013 7,911,927'Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them'2011 7,727,686'Method of making LC polymer film'2010 7,692,184'Substrate with organic thin film, and transistor using same'2010 7,507,290'Flux assisted solid phase epitaxy'2009 7,442,252'Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element'2008 7,259,409'Thin film device and its fabrication method'2007 7,150,788'Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate'2006 7,029,528'Method for flattening surface of oxide crystal to ultra high degree'2006 6,929,695'Method for preparing single crystal oxide thin film'2005 6,919,138'Titanium dioxide cobalt magnetic film and its manufacturing method'2005 6,902,317'Method and device for measuring thermoelectric characteristics of combinatorial specimen'2005 6,888,156'Thin film device'2005 6,855,972'Composite integrated circuit and its fabrication method'2005 6,677,581'High energy electron diffraction apparatus'2004 6,617,539'Laser heating apparatus'2003 6,593,164'Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same'2003 6,459,763'Combinatorial X-ray diffractor'2002 6,433,269'Silicon photoelectric conversion device, method of fabricating the same and method of processing the same'2002 6,344,084'Combinatorial molecular layer epitaxy device'2002 6,057,561'Optical semiconductor element'2000 6,013,153'Process for surface treatment of vulcanized rubber and process for production of rubber-based composite material'2000 5,855,668'Surface treating method of single crystal'1999 5,569,502'Film formation apparatus and method for forming a film'1996 5,549,780'Method for plasma processing and apparatus for plasma processing'1996 5,369,336'Plasma generating device'1994 5,221,427'Plasma generating device and method of plasma processing'1993 5,198,724'Plasma processing method and plasma generating device'1993 5,155,094'Tunneling Josephson element with a blocking layer inert to oxygen'1992 5,102,862'Method for manufacturing a tunneling Josephson element'1992 5,075,282'Printing method of forming oxide superconducting films on La.sub.2 Cu O.sub .'1991 4,933,300'Process for forming multilayer thin film'1990 4,902,671'Manufacturing method of conductive or superconductive thin film'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2015Patents assigned to KOINUMA HIDEOMI (3)· patent assignee history

1990–2015Based in Tokyo, JP· patent location history

1990–2011Based in Suginami-ku, JP· patent location history

1991–1996Patents assigned to SEMICONDUCTOR ENERGY LAB (6)· patent assignee history

2000–2006Patents assigned to JAPAN SCIENCE & TECH CORP (7)· patent assignee history

2002–2004Based in Yokohama, JP· patent location history

2005–2015Patents assigned to JAPAN SCIENCE & TECH AGENCY (8)· patent assignee history

2005–2013Patents assigned to NAT INST FOR MATERIALS SCIENCE (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
JAPAN SCIENCE & TECH AGENCY	8	2005–2015
JAPAN SCIENCE & TECH CORP	7	2000–2006
SEMICONDUCTOR ENERGY LAB	6	1991–1996
KOINUMA HIDEOMIself	3	1990–2015
NAT INST FOR MATERIALS SCIENCE	3	2005–2013

Locations

Location	Patents	Span
Tokyo, JP	27	1990–2015
Suginami-ku, JP	4	1990–2011
Yokohama, JP	3	2002–2004