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Inventor

GLEN A. SLACK

Inventor
US

Overview

2→
Patents
2021–2022
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth18%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
B28DWorking stone or stone-like materials9%
C23CCoating metallic material9%
H10DInorganic electric semiconductor devices9%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
Y10TTechnical subjects covered by former us classification9%
PatentTitleYear
11,225,731Large aluminum nitride crystals with reduced defects and methods of making them202211,183,567Doped aluminum nitride crystals and methods of making them2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2022Patents assigned to CRYSTAL IS INC (2)· patent assignee history
2021–2022Patents assigned to SCHOWALTER LEO J (2)· patent assignee history
2021–2022Patents assigned to SLACK GLEN A (2)· patent assignee history
2021–2022Based in US· patent location history
2022Patents assigned to BONDOKOV ROBERT (1)· patent assignee history
2022Patents assigned to MORGAN KENNETH E (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CRYSTAL IS INC22021–2022
SCHOWALTER LEO J22021–2022
SLACK GLEN Aself22021–2022
BONDOKOV ROBERT12022
MORGAN KENNETH E12022
Locations
LocationPatentsSpan
US22021–2022