Inventor
Maurice Rivoire
Inventor
Meylan, FR
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
C09GPolishing compositions11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
C09KMaterials for miscellaneous applications, not provided for elsewhere10%
H01LSemiconductor devices5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
C23CCoating metallic material3%
C30BSingle-crystal growth3%
B01DSeparation2%
B24BMachines, devices, or processes for grinding or polishing2%
PatentTitleYear
9,865,545'Plurality of substrates bonded by direct bonding of copper recesses'20189,620,385'Method of planarizing recesses filled with copper'20179,620,412'Method for modifying the crystalline structure of a copper element'20178,647,983'Simplified copper-copper bonding'20148,562,934'Method for forming porous material in microcavity or micropassage by mechanicochemical polishing'20138,323,733'Method for producing a membrane comprising micropassages made from porous material by chemical mechanical polishing'20127,713,766'Light sensor located above an integrated circuit'20107,492,026'Light sensor located above an integrated circuit'20097,252,695'Abrasive composition for the integrated circuit electronics industry'20077,200,908'Method of making a variable capacitor component'20077,144,814'Abrasive composition for the integrated circuits electronics industry'20066,429,098'Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained'20026,399,502'Process for fabricating a planar heterostructure'20026,386,950'Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting material'20026,362,108'Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant'20026,302,765'Process for mechanical chemical polishing of a layer in a copper-based material'20016,126,518'Chemical mechanical polishing process for layers of semiconductor or isolating materials'20006,117,750'Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively'20006,043,159'Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon'20005,431,964'Method of pretreating the deposition chamber and/or the substrate for the selective deposition of tungsten'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2018Based in Meylan, FR· patent location history
2000–2002Patents assigned to CLARIANT FRANCE SA (4)· patent assignee history
2000–2002Patents assigned to FRANCE TELECOM (3)· patent assignee history
2007–2018Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (6)· patent assignee history
2012–2017Patents assigned to RIVOIRE MAURICE (4)· patent assignee history
2012–2014Patents assigned to ST MICROELECTRONICS CROLLES 2 (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 6 | 2007–2018 |
| CLARIANT FRANCE SA | 4 | 2000–2002 |
| RIVOIRE MAURICEself | 4 | 2012–2017 |
| FRANCE TELECOM | 3 | 2000–2002 |
| ST MICROELECTRONICS CROLLES 2 | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Meylan, FR | 20 | 1995–2018 |