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Inventor

Shinichiro Miyahara

Inventor
Nagoya, JP

Overview

24→
Patents
1993–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
A61BDiagnosis6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C30BSingle-crystal growth2%
G01RMeasuring electric variables2%
H01QAntennas, i.e. radio aerials2%
H04LTransmission of digital information, e.g. telegraphic communication2%
PatentTitleYear
10,784,335Silicon carbide semiconductor device and manufacturing method therefor202010,181,517Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device201910,153,350Semiconductor device201810,068,972Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage20189,972,674Schottky barrier diode and manufacturing method thereof20189,941,366Semiconductor device and manufacturing method of semiconductor device20189,905,686'Insulated gate bipolar transistor with improved on/off resistance'20189,847,414Semiconductor device and method for manufacturing semiconductor device having a step provided in a lateral surface of a trench formed in a surface of a semiconductor substrate20179,793,376'Silicon carbide semiconductor device and method of manufacturing the same'20179,698,017'Manufacturing method of semiconductor device'20179,633,901'Method for manufacturing semiconductor device'20179,136,372'Silicon carbide semiconductor device'20159,024,330'Semiconductor device and manufacturing method thereof'20158,975,139'Manufacturing method of silicon carbide semiconductor device'20158,575,689'Silicon carbide semiconductor device and manufacturing method of the same'20138,525,223'Silicon carbide semiconductor device'20138,470,672'Method of manufacturing silicon carbide semiconductor device'20138,334,541'SiC semiconductor device'20128,096,953'Organism information detecting apparatus'20127,928,830'Biometric information detecting apparatus'20117,692,591'Portable electronic apparatus'20107,060,963'Organism information measuring device and organism information measuring method'20065,187,720'Synchronous serial communication circuit'19935,187,441'Portable information apparatus for sensing battery voltage drop'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2012Patents assigned to SEIKO INSTR INC (6)· patent assignee history
1993Based in Tokyo, JP· patent location history
2006–2012Based in Chiba, JP· patent location history
2012–2020Patents assigned to TOYOTA MOTOR CO LTD (17)· patent assignee history
2012–2020Patents assigned to DENSO CORP (10)· patent assignee history
2012–2018Patents assigned to MIYAHARA SHINICHIRO (9)· patent assignee history
2012–2015Patents assigned to WATANABE YUKIHIKO (7)· patent assignee history
2012–2015Based in Nisshin, JP· patent location history
2015–2018Based in Nagoya, JP· patent location history
2018–2020Based in Kariya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOYOTA MOTOR CO LTD172012–2020
DENSO CORP102012–2020
MIYAHARA SHINICHIROself92012–2018
WATANABE YUKIHIKO72012–2015
SEIKO INSTR INC61993–2012
Locations
LocationPatentsSpan
Nagoya, JP102015–2018
Nisshin, JP52012–2015
Chiba, JP42006–2012
Kariya, JP32018–2020
Tokyo, JP21993