Inventor
Chentsau Ying
Inventor
Cupertino, CA, US
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices11%
H10DInorganic electric semiconductor devices10%
C23FNon-mechanical removal of metallic material from surface9%
H01JElectric discharge tubes or discharge lamps9%
C23CCoating metallic material7%
H10NElectric solid-state devices not otherwise provided for7%
B82YSpecific uses or applications of nanostructures5%
H01FMagnets5%
H10BElectronic memory devices3%
PatentTitleYear
10,964,527Residual removal202110,858,727High density, low stress amorphous carbon film, and process and equipment for its deposition202010,685,849Damage free metal conductor formation202010,490,467Methods of forming a stack of multiple deposited semiconductor layers201910,249,495Diamond like carbon layer formed by an electron beam plasma process201910,128,337Methods for forming fin structures with desired profile for 3D structure semiconductor applications20189,865,484'Selective etch using material modification and RF pulsing'20189,865,464'Nanocrystalline diamond carbon film for 3D NAND hardmask application'20189,852,916Single platform, multiple cycle spacer deposition and etch20179,502,262'Nanocrystalline diamond carbon film for 3D NAND hardmask application'20169,484,202'Apparatus and methods for spacer deposition and selective removal in an advanced patterning process'20169,406,522'Single platform, multiple cycle spacer deposition and etch'20169,382,625'Remote plasma source based cyclic CVD process for nanocrystalline diamond deposition'20169,190,290'Halogen-free gas-phase silicon etch'20157,320,942'Method for removal of metallic residue after plasma etching of a metal layer'20087,105,361'Method of etching a magnetic material'20066,984,585'Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer'20066,964,928'Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask'20056,943,039'Method of etching ferroelectric layers'20056,942,813'Method of etching magnetic and ferroelectric materials using a pulsed bias source'20056,933,239'Method for removing conductive residue'20056,919,168'Masking methods and etching sequences for patterning electrodes of high density RAM capacitors'20056,911,346'Method of etching a magnetic material'20056,841,484'Method of fabricating a magneto-resistive random access memory (MRAM) device'20056,759,263'Method of patterning a layer of magnetic material'20046,749,770'Method of etching an anisotropic profile in platinum'20046,579,796'Method of etching platinum using a silicon carbide mask'20036,541,380'Plasma etching process for metals and metal oxides, including metals and metal oxides inert to oxidation'20036,323,132'Etching methods for anisotropic platinum profile'20016,265,318'Iridium etchant methods for anisotropic profile'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2021Patents assigned to APPLIED MATERIALS INC (26)· patent assignee history
2001–2021Based in Cupertino, CA, US· patent location history
2005Patents assigned to CHEN XIAOYI (1)· patent assignee history
2005Patents assigned to KUMAR AJAY (1)· patent assignee history
2005Patents assigned to NALLAN PADMAPANI C (1)· patent assignee history
2005Patents assigned to YING CHENTSAU (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 26 | 2001–2021 |
| CHEN XIAOYI | 1 | 2005 |
| KUMAR AJAY | 1 | 2005 |
| NALLAN PADMAPANI C | 1 | 2005 |
| YING CHENTSAUself | 1 | 2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cupertino, California, US | 30 | 2001–2021 |