Inventor
Shinichi Miyatake
Inventor
Tokyo, JP
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores51%
H10BElectronic memory devices20%
H10DInorganic electric semiconductor devices12%
H01LSemiconductor devices6%
G05FSystems for regulating electric or magnetic variables4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H03KPulse technique1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
PatentTitleYear
11,069,384Apparatuses and methods for compensation of sense amplifiers202110,937,476Apparatuses and methods for controlling word line discharge202110,854,272Apparatuses and methods for controlling word line discharge202010,770,462Circuit and layout for single gate type precharge circuit for data lines in memory device202010,714,158Two-step data-line precharge scheme202010,714,153Reversed bias compensation for sense amplifier operation202010,665,311Apparatuses and methods including anti-fuses and for reading and programming of same202010,482,931Reversed bias compensation for sense amplifier operation201910,276,253Apparatuses and methods including anti-fuses and for reading and programming of same201910,236,040Two-step data-line precharge scheme201910,163,906Circuit and layout for single gate type precharge circuit for data lines in memory device20189,330,794'DRAM-based anti-fuse cells'20169,081,402'Semiconductor device having a complementary field effect transistor'20159,053,760'Semiconductor device including a sense amplifier'20158,773,195'Semiconductor device having a complementary field effect transistor'20148,339,868'Semiconductor device and write control method for semiconductor device'20128,222,952'Semiconductor device having a complementary field effect transistor'20128,217,712'Semiconductor device that can adjust substrate voltage'20127,995,405'Semiconductor memory device having a sense amplifier circuit with decreased offset'20117,969,765'Sense amplifier for semiconductor memory device'20117,952,950'Semiconductor device including anti-fuse circuit, and method of writing address to anti-fuse circuit'20117,876,627'Semiconductor memory device having a sense amplifier circuit with decreased offset'20117,842,976'Semiconductor device having MOS transistors which are serially connected via contacts and conduction layer'20107,609,572'Semiconductor memory device'20097,554,863'Voltage control circuit and semiconductor device having the voltage control circuit'20097,447,091'Sense amplifier for semiconductor memory device'20087,200,061'Sense amplifier for semiconductor memory device'20076,992,343'Semiconductor memory device'20066,925,017'Semiconductor device'20056,882,557'Semiconductor memory device'20056,828,612'Semiconductor memory device'20046,633,508'Semiconductor memory device and memory system'20036,538,946'Semiconductor integrated circuit device'20036,411,543'Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device'20026,282,141'Semiconductor memory device and memory system'20016,201,728'Dynamic RAM, semiconductor storage device, and semiconductor integrated circuit device'20016,198,128'Method of manufacturing a semiconductor device, and semiconductor device'20016,178,108'Semiconductor memory device'20016,064,605'Semiconductor memory device and memory system'20005,983,358'Semiconductor memory having redundancy circuit'19995,970,003'Semiconductor memory device'19995,969,996'Semiconductor memory device and memory system'19995,963,467'Semiconductor memory device'19995,905,685'Dynamic memory'19995,818,784'Semiconductor memory device and memory system'19985,335,203'Semiconductor integrated circuit device with internal voltage drop circuits'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2011Patents assigned to HITACHI LTD (20)· patent assignee history
1994–2003Based in Hamura, JP· patent location history
1998–2003Patents assigned to HITACHI ULSI ENG CORP (9)· patent assignee history
1999–2008Patents assigned to HITACHI ULSI SYS CO LTD (7)· patent assignee history
1999–2011Based in Ome, JP· patent location history
2001–2015Based in Tokyo, JP· patent location history
2004–2012Patents assigned to ELPIDA MEMORY INC (13)· patent assignee history
2012–2020Based in Chuo-ku, JP· patent location history
2016–2021Patents assigned to MICRON TECHNOLOGY INC (12)· patent assignee history
2016–2021Based in Sagamihara, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 20 | 1994–2011 |
| ELPIDA MEMORY INC | 13 | 2004–2012 |
| MICRON TECHNOLOGY INC | 12 | 2016–2021 |
| HITACHI ULSI ENG CORP | 9 | 1998–2003 |
| HITACHI ULSI SYS CO LTD | 7 | 1999–2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 13 | 2001–2015 |
| Ome, JP | 10 | 1999–2011 |
| Hamura, JP | 10 | 1994–2003 |
| Sagamihara, JP | 7 | 2016–2021 |
| Chuo-ku, JP | 4 | 2012–2020 |