Inventor

Maxim S. Shatalov

Inventor

Columbia, SC, US

Overview

2013–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 148 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers20%

H01LSemiconductor devices20%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

H10DInorganic electric semiconductor devices8%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%

A61LMethods or apparatus for sterilising materials or objects in general4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

B82YSpecific uses or applications of nanostructures3%

F25DRefrigerators3%

G06FElectric digital data processing2%

PatentTitleYear

11,063,178Semiconductor heterostructure with improved light emission2021 11,027,319Illumination using multiple light sources2021 10,950,747Heterostructure for an optoelectronic device2021 10,923,623Semiconductor layer including compositional inhomogeneities2021 10,923,619Semiconductor heterostructure with at least one stress control layer2021 10,907,055Curing ultraviolet sensitive polymer materials2021 10,903,391Optoelectronic device with modulation doping2021 10,881,755Ultraviolet illumination with optical elements2021 10,849,996Storage device including ultraviolet illumination2020 10,854,785Contact configuration for optoelectronic device2020 10,842,081Controlling light exposure of light sensitive object2020 10,804,423Optoelectronic device with modulation doping2020 10,788,186Illumination with blue UV light source and visible light source2020 10,787,375Ultraviolet water disinfection system2020 10,770,616Heterostructure with sacrificial layer2020 10,751,663Ultraviolet treatment of volatile organic compounds2020 10,707,379Configuration for optoelectronic device2020 10,688,210Storage device including ultraviolet illumination2020 10,624,978Ultraviolet-based mildew control2020 10,629,770Semiconductor method having annealing of epitaxially grown layers to form semiconductor structure with low dislocation density2020 10,622,515Patterned layer design for group III nitride layer growth2020 10,615,307Semiconductor structure with inhomogeneous regions2020 10,598,468Simulation of missile signatures2020 10,576,174Ultraviolet gradient sterilization, disinfection, and storage system2020 10,535,793Group III nitride heterostructure for optoelectronic device2020 10,517,976Ultraviolet system for disinfection2019 10,522,714Device with inverted large scale light extraction structures2019 10,497,829Semiconductor material doping2019 10,497,824Light emitting heterostructure with partially relaxed semiconductor layer2019 10,490,697Epitaxy technique for growing semiconductor compounds2019 10,490,713Ultraviolet device encapsulant2019 10,478,515Multi wave sterilization system2019 10,460,952Stress relieving semiconductor layer2019 10,454,006Heterostructure including anodic aluminum oxide layer2019 10,441,670Storage device including ultraviolet illumination2019 10,433,493Controlling ultraviolet intensity over a surface of a light sensitive object2019 10,411,156Device with transparent and higher conductive regions in lateral cross section of semiconductor layer2019 10,383,964Storage device including ultraviolet illumination2019 10,347,793Metallic contact for optoelectronic semiconductor device2019 10,319,881Device including transparent layer with profiled surface for improved extraction2019 10,297,460Stress relieving semiconductor layer2019 10,276,749Ultraviolet reflective rough adhesive contact2019 10,272,168Storage device including target UV illumination ranges2019 10,243,100Semiconductor layer including compositional inhomogeneities2019 10,224,456Deep ultraviolet light emitting diode2019 10,224,408Perforating contact to semiconductor layer2019 10,211,048Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds2019 10,199,535Semiconductor structure with stress-reducing buffer structure2019 10,199,531Semiconductor heterostructure with stress management2019 10,199,537Semiconductor structure with stress-reducing buffer structure2019 10,199,536Patterned layer design for group III nitride layer growth2019 10,181,398Strain-control heterostructure growth2019 10,177,534Electron beam pumping for light emission2019 10,178,726Solid-state lighting structure with integrated control2019 10,172,968Storage device including target UV illumination ranges2019 10,164,147Non-uniform superlattice structure2018 10,158,044Epitaxy technique for growing semiconductor compounds2018 10,153,396Patterned layer design for group III nitride layer growth2018 10,147,854Packaging for ultraviolet optoelectronic device2018 10,147,848Contact configuration for optoelectronic device2018 10,096,742Light emitting device substrate with inclined sidewalls2018 10,090,210Material growth with temperature controlled layer2018 10,069,034Optoelectronic device with modulation doping2018 10,050,174Device with transparent and higher conductive regions in lateral cross section of semiconductor layer2018 10,050,172Substrate structure removal2018 10,050,175Patterned layer design for group III nitride layer growth2018 10,032,956Patterned substrate design for layer growth2018 9,999,782Ultraviolet-based sterilization2018 9,997,667Semiconductor material doping2018 9,981,051Ultraviolet gradient sterilization, disinfection, and storage system2018 9,966,496Light emitting heterostructure with partially relaxed semiconductor layer2018 9,960,315Light emitting heterostructure with partially relaxed semiconductor layer2018 9,923,118'Semiconductor structure with inhomogeneous regions'2018 9,919,068'Storage device including ultraviolet illumination'2018 9,923,117'Semiconductor structure with inhomogeneous regions'2018 9,911,895'Semiconductor structure with inhomogeneous regions'2018 9,911,900'Device including transparent layer with profiled surface for improved extraction'2018 9,894,723'Solid-state lighting structure with integrated control'2018 9,878,061'Ultraviolet system for disinfection'2018 9,876,140Semiconductor structure with stress-reducing buffer structure2018 9,831,382Epitaxy technique for growing semiconductor compounds2017 9,818,826'Heterostructure including a composite semiconductor layer'2017 9,818,912'Ultraviolet reflective contact'2017 9,806,226'Deep ultraviolet light emitting diode'2017 9,806,228'Patterned layer design for group III nitride layer growth'2017 9,795,699'Storage device including target UV illumination ranges'2017 9,799,793'Semiconductor heterostructure with stress management'2017 9,793,439'Metallic contact for optoelectronic semiconductor device'2017 9,768,357'Ultraviolet reflective rough adhesive contact'2017 9,750,830'Multi wave sterilization system'2017 9,748,440'Semiconductor layer including compositional inhomogeneities'2017 9,741,899'Device with inverted large scale light extraction structures'2017 9,735,315'Semiconductor heterostructure with stress management'2017 9,724,441'Storage device including target UV illumination ranges'2017 9,722,139'Non-uniform multiple quantum well structure'2017 9,707,307'Ultraviolet system for disinfection'2017 9,691,939'Patterned layer design for group III nitride layer growth'2017 9,691,680'Structured substrate'2017 9,680,061'Patterned layer design for group III nitride layer growth'2017 9,660,043'Ohmic contact to semiconductor layer'2017 9,660,133'Group III nitride heterostructure for optoelectronic device'2017 9,653,631'Optoelectronic device with modulation doping'2017 9,653,313'Stress relieving semiconductor layer'2017 9,646,911'Composite substrate'2017 9,647,168'Optoelectronic device with modulation doping'2017 9,634,189'Patterned substrate design for layer growth'2017 9,634,183'Semiconductor material doping'2017 9,595,636'Light emitting device substrate with inclined sidewalls'2017 9,595,634'Device with transparent and higher conductive regions in lateral cross section of semiconductor layer'2017 9,562,171'Ultraviolet device encapsulant'2017 9,548,429'Packaging for ultraviolet optoelectronic device'2017 9,543,400'Ohmic contact to semiconductor'2017 9,537,054'Semiconductor heterostructure with stress management'2017 9,502,509'Stress relieving semiconductor layer'2016 9,437,774'Deep ultraviolet light emitting diode'2016 9,425,353'Heterostructure including anodic aluminum oxide layer'2016 9,412,902'Semiconductor structure with stress-reducing buffer structure'2016 9,406,840'Semiconductor layer including compositional inhomogeneities'2016 9,397,260'Patterned layer design for group III nitride layer growth'2016 9,385,271'Device with transparent and higher conductive regions in lateral cross section of semiconductor layer'2016 9,368,580'Semiconductor material doping'2016 9,337,387'Emitting device with improved extraction'2016 9,330,906'Stress relieving semiconductor layer'2016 9,331,244'Semiconductor structure with inhomogeneous regions'2016 9,324,560'Patterned substrate design for layer growth'2016 9,312,448'Metallic contact for optoelectronic semiconductor device'2016 9,312,428'Light emitting heterostructure with partially relaxed semiconductor layer'2016 9,287,449'Ultraviolet reflective rough adhesive contact'2016 9,287,442'Semiconductor material doping'2016 9,281,441'Semiconductor layer including compositional inhomogeneities'2016 9,269,788'Ohmic contact to semiconductor'2016 9,267,770'Light emitting diodes for simulation of missile signatures'2016 9,179,703'Ultraviolet system for disinfection'2015 9,184,346'Ultraviolet reflective contact'2015 9,184,339'Deep ultraviolet light emitting diode'2015 9,142,741'Emitting device with improved extraction'2015 9,105,792'Patterned layer design for group III nitride layer growth'2015 9,061,082'Ultraviolet-based sterilization'2015 9,048,378'Device with inverted large scale light extraction structures'2015 9,042,420'Device with transparent and higher conductive regions in lateral cross section of semiconductor layer'2015 9,034,271'Storage device including ultraviolet illumination'2015 8,981,403'Patterned substrate design for layer growth'2015 8,969,198'Ohmic contact to semiconductor layer'2015 8,927,959'Deep ultraviolet light emitting diode'2015 8,907,322'Deep ultraviolet light emitting diode'2014 8,879,598'Emitting device with compositional and doping inhomogeneities in semiconductor layers'2014 8,787,418'Emitting device with compositional and doping inhomogeneities in semiconductor layers'2014 8,426,225'Semiconductor material doping based on target valence band discontinuity'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2021Patents assigned to SENSOR ELECTRONIC TECH INC (147)· patent assignee history

2013–2016Patents assigned to GASKA REMIGIJUS (7)· patent assignee history

2013–2016Patents assigned to SHATALOV MAXIM S (7)· patent assignee history

2013–2016Patents assigned to SHUR MICHAEL (7)· patent assignee history

2013–2016Patents assigned to YANG JINWEI (4)· patent assignee history

2013–2021Based in Columbia, SC, US· patent location history

2020Based in Lexington, SC, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SENSOR ELECTRONIC TECH INC	147	2013–2021
GASKA REMIGIJUS	7	2013–2016
SHATALOV MAXIM Sself	7	2013–2016
SHUR MICHAEL	7	2013–2016
YANG JINWEI	4	2013–2016

Locations

Location	Patents	Span
Columbia, SC, US	145	2013–2021
Lexington, SC, US	3	2020