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Inventor

Yoshio Enosawa

Inventor
Miyagi, JP

Overview

3→
Patents
1990–2004
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices67%
H10BElectronic memory devices33%
PatentTitleYear
6,773,997'Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability'20046,492,679'Method for manufacturing a high voltage MOSFET device with reduced on-resistance'20024,977,436'High density DRAM'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990Patents assigned to MOTOROLA INC (1)· patent assignee history
1990Based in Sendai, JP· patent location history
2002–2004Patents assigned to SEMICONDUCTOR COMPONENTS IND (2)· patent assignee history
2002–2004Based in Miyagi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR COMPONENTS IND22002–2004
MOTOROLA INC11990
Locations
LocationPatentsSpan
Miyagi, JP22002–2004
Sendai, JP11990