Inventor
Oana Julia Spulber
Inventor
Neubiberg, DE
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
11,081,544Method of manufacturing a semiconductor device comprising first and second field stop zone portions202111,004,963Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method202110,734,484Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions202010,546,939N-channel bipolar power semiconductor device with P-layer in the drift volume202010,332,973N-channel bipolar power semiconductor device with p-layer in the drift volume20199,978,851n-channel bipolar power semiconductor device with p-layer in the drift volume2018Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2018–2021Patents assigned to INFINEON TECHNOLOGIES AG (6)· patent assignee history
2018–2021Based in Neubiberg, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 6 | 2018–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Neubiberg, DE | 6 | 2018–2021 |