Inventor
David K. Carlson
Inventor
San Jose, CA, US
Overview
Patents· 98 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
C23CCoating metallic material22%
C30BSingle-crystal growth10%
H01LSemiconductor devices6%
Y10TTechnical subjects covered by former us classification5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10DInorganic electric semiconductor devices2%
C01BNon-metallic elements2%
B01DSeparation2%
F17DPipe-line systems2%
PatentTitleYear
11,123,900Mold tool with anisotropic thermal properties202111,077,596Assembly fixture with anisotropic thermal properties202111,059,561Torque box rib and method for installation thereof202110,837,121Susceptor support202010,586,744Method for optimizing dry absorber efficiency and lifetime in epitaxial applications202010,557,203Temperature control system and process for gaseous precursor delivery202010,500,614Temperature controlled remote plasma clean for exhaust deposit removal201910,458,040Upper dome with injection assembly201910,119,192EPI base ring201810,119,194Indexed gas jet injector for substrate processing system201810,043,870Method and structure to improve film stack with sensitive and reactive layers20189,857,028'Chamber pressure control apparatus for chemical vapor deposition systems'20189,845,550Upper dome with injection assembly20179,799,737'Method for forming group III/V conformal layers on silicon substrates'20179,768,043'Quartz upper and lower domes'20179,695,508'Liner assembly for chemical vapor deposition chamber'20179,534,295'Chamber pressure control apparatus for chemical vapor deposition systems'20179,530,888'MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates'20169,512,520'Semiconductor substrate processing system'20169,476,144'Method and apparatus for the selective deposition of epitaxial germanium stressor alloys'20169,443,728'Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing'20169,406,538'Indexed inline substrate processing tool'20169,396,909'Gas dispersion apparatus'20169,347,696'Compact ampoule thermal management system'20169,322,097'EPI base ring'20169,279,604'Compact ampoule thermal management system'20169,159,554'Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si'20159,120,075'UV assisted polymer modification and in situ exhaust cleaning'20159,111,980'Gas exhaust for high volume, low cost system for epitaxial silicon deposition'20159,032,990'Chemical delivery system'20158,991,332'Apparatus to control semiconductor film deposition characteristics'20158,986,454'Window assembly for use in substrate processing systems'20158,980,005'Liner assembly for chemical vapor deposition chamber'20158,960,235'Gas dispersion apparatus'20158,813,538'Methods and apparatus for insitu analysis of gases in electronic device fabrication systems'20148,726,837'Semiconductor process chamber vision and monitoring system'20148,724,976'Use of infrared camera for real-time temperature monitoring and control'20148,663,390'Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems'20148,658,540'Methods for low temperature conditioning of process chambers'20148,603,898'Method for forming group III/V conformal layers on silicon substrates'20138,551,415'UV assisted polymer modification and in situ exhaust cleaning'20138,524,555'Susceptor with backside area of constant emissivity'20138,501,600'Methods for depositing germanium-containing layers'20138,343,317'In situ cleaning of CVD System exhaust'20138,337,619'Polymeric coating of substrate processing system components for contamination control'20128,313,804'Apparatus and methods for chemical vapor deposition'20128,309,440'Method and apparatus for cleaning a substrate surface'20128,226,770'Susceptor with backside area of constant emissivity'20128,150,242'Use of infrared camera for real-time temperature monitoring and control'20128,020,427'Methods and apparatus for insitu analysis of gases in electronic device fabrication systems'20118,008,166'Method and apparatus for cleaning a substrate surface'20117,976,634'Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems'20117,967,911'Apparatus and methods for chemical vapor deposition'20117,770,431'Methods and apparatus for insitu analysis of gases in electronic device fabrication systems'20107,758,697'Silicon-containing layer deposition with silicon compounds'20107,718,225'Method to control semiconductor film deposition characteristics'20107,709,391'Methods for in-situ generation of reactive etch and growth specie in film formation processes'20107,645,339'Silicon-containing layer deposition with silicon compounds'20107,560,352'Selective deposition'20097,540,920'Silicon-containing layer deposition with silicon compounds'20097,534,714'Radial temperature control for lattice-mismatched epitaxy'20097,396,743'Low temperature epitaxial growth of silicon-containing films using UV radiation'20087,262,116'Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation'20076,876,442'Method of calibrating and using a semiconductor processing system'20056,685,779'Method and a system for sealing an epitaxial silicon layer on a substrate'20046,500,734'Gas inlets for wafer processing chamber'20026,489,220'Method and a system for sealing an epitaxial silicon layer on a substrate'20026,476,362'Lamp array for thermal processing chamber'20026,455,814'Backside heating chamber for emissivity independent thermal processes'20026,436,194'Method and a system for sealing an epitaxial silicon layer on a substrate'20026,376,387'Method of sealing an epitaxial silicon layer on a substrate'20026,368,567'Point-of-use exhaust by-product reactor'20026,315,833'Silicon carbide sleeve for substrate support assembly'20016,254,686'Vented lower liner for heating exhaust gas from a single substrate reactor'20016,245,149'Inert barrier for high purity epitaxial deposition systems'20016,153,260'Method for heating exhaust gas in a substrate reactor'20006,083,323'Method for controlling the temperature of the walls of a reaction chamber during processing'20006,064,799'Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature'20006,060,788'Vehicle driver module'20005,924,058'Permanently mounted reference sample for a substrate measurement tool'19995,916,369'Gas inlets for wafer processing chamber'19995,914,050'Purged lower liner'19995,876,797'Low temperature high pressure silicon deposition method'19995,855,677'Method and apparatus for controlling the temperature of reaction chamber walls'19995,700,520'Low temperature, high pressure silicon deposition method'19975,607,724'Low temperature high pressure silicon deposition method'19975,476,359'Robotically loaded epitaxial deposition apparatus'19955,421,957'Low temperature etching in cold-wall CVD systems'19955,411,593'Apparatus for servicing vacuum chamber using non-reactive gas filled maintenance enclosure'19955,374,159'Robotically loaded epitaxial deposition apparatus'19945,316,794'Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure'19945,258,824'In-situ measurement of a thin film deposited on a wafer'19935,179,677'Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity'19935,116,181'Robotically loaded epitaxial deposition apparatus'19925,104,276'Robotically loaded epitaxial deposition apparatus'19924,928,626'Reactant gas injection for IC processing'19904,478,322'Lockup clutch control system'19844,206,491'Entry system'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1984Based in Dearborn, MI, US· patent location history
1990–2020Patents assigned to APPLIED MATERIALS INC (91)· patent assignee history
1990–2010Based in Santa Clara, CA, US· patent location history
2000Based in Oakland, MI, US· patent location history
2007–2020Based in San Jose, CA, US· patent location history
2008–2016Patents assigned to KUPPURAO SATHEESH (6)· patent assignee history
2012–2016Patents assigned to CARLSON DAVID K (18)· patent assignee history
2012–2016Patents assigned to SANCHEZ ERROL ANTONIO C (6)· patent assignee history
2012–2015Patents assigned to SANCHEZ ERROL (5)· patent assignee history
2021Based in North Richland Hills, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 91 | 1990–2020 |
| CARLSON DAVID Kself | 18 | 2012–2016 |
| KUPPURAO SATHEESH | 6 | 2008–2016 |
| SANCHEZ ERROL ANTONIO C | 6 | 2012–2016 |
| SANCHEZ ERROL | 5 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 57 | 2007–2020 |
| Santa Clara, California, US | 35 | 1990–2010 |
| North Richland Hills, Texas, US | 3 | 2021 |
| Oakland, MI, US | 1 | 2000 |
| Dearborn, MI, US | 1 | 1984 |