Inventor
HAN WUI THEN
Inventor
US
Overview
Patents· 103 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H03HImpedance networks, e.g. resonant circuits3%
B82YSpecific uses or applications of nanostructures1%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
H10NElectric solid-state devices not otherwise provided for1%
G06FElectric digital data processing1%
H01FMagnets1%
PatentTitleYear
12,433,007Transistor gate trench engineering to decrease capacitance and resistance202512,432,964Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology202512,424,589Contiguous shield structures in microelectronic assemblies having hybrid bonding202512,417,978Microelectronic assemblies having backside die-to-package interconnects202512,396,232III-N diodes with n-doped wells and capping layers202512,381,039High voltage metal insulator metal (MIM) capacitor202512,336,268Gallium nitride (GaN) integrated circuit technology202512,302,618Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology202512,292,608Gallium nitride (GaN) integrated circuit technology with optical communication202512,199,018Direct bonding in microelectronic assemblies202512,156,473Inductor/core assemblies for integrated circuits202412,148,747Gallium nitride (GAN) three-dimensional integrated circuit technology202412,148,757Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material202412,148,690Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances202412,125,888Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication202412,107,060Microelectronic assemblies with inductors in direct bonding regions202412,080,763Silicide for group III-nitride devices and methods of fabrication202412,062,631Microelectronic assemblies with inductors in direct bonding regions202412,034,085Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers202412,027,613III-N transistor arrangements for reducing nonlinearity of off-state capacitance202411,942,378Tunnel polarization junction III-N transistors202411,894,465Deep gate-all-around semiconductor device having germanium or group III-V active layer202411,881,511Superlattice FINFET with tunable drive current capability202411,848,362III-N transistors with contacts of modified widths202311,799,057Group III-nitride light emitting devices including a polarization junction202311,791,221Integration of III-N transistors and semiconductor layer transfer202311,777,022Transistors including first and second semiconductor materials between source and drain regions and methods of manufacturing the same202311,757,027E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown202311,728,346Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication202311,715,791Group III-Nitride devices on SOI substrates having a compliant layer202311,715,799Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping202311,715,790Charge-induced threshold voltage tuning in III-N transistors202311,710,765High aspect ratio non-planar capacitors formed via cavity fill202311,705,882Acoustic resonator structure202311,699,704Monolithic integration of a thin film transistor over a complimentary transistor202311,688,788Transistor gate structure with hybrid stacks of dielectric material202311,670,637Logic circuit with indium nitride quantum well202311,671,075Film bulk acoustic resonator (FBAR) devices for high frequency RF filters202311,670,686III-N nanostructures formed via cavity fill202311,670,709III-N transistors with local stressors for threshold voltage control202311,664,417III-N metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials202311,658,217Transistors with ion- or fixed charge-based field plate structures202311,652,143III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics202311,626,513Antenna gate field plate on 2DEG planar FET202311,616,488FBAR devices having multiple epitaxial layers stacked on a same substrate202311,610,887Side-by-side integration of III-n transistors and thin-film transistors202311,610,971Cap layer on a polarization layer to preserve channel sheet resistance202311,588,037Planar transistors with wrap-around gates and wrap-around source and drain contacts202311,587,862Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances202311,587,924Integration of passive components in III-N devices202311,581,313Integration of III-N transistors and non-III-N transistors by semiconductor regrowth202311,575,036Gallium nitride transistors with source and drain field plates and their methods of fabrication202311,563,098Transistor gate shape structuring approaches202311,558,032RF filters and resonators of crystalline III-N films202311,557,667Group III-nitride devices with improved RF performance and their methods of fabrication202311,552,075Group III-nitride (III-N) devices and methods of fabrication202311,545,586Group III-nitride Schottky diode202311,538,901Capacitor including multilayer dielectric stack202211,538,804Stacked integration of III-N transistors and thin-film transistors202211,532,601Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits202211,527,532Enhancement-depletion cascode arrangements for enhancement mode III-N transistors202211,527,610CMOS compatible isolation leakage improvements in gallium nitride transistors202211,521,964Schottky diode structures and integration with III-V transistors202211,515,407High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS202211,515,402Microelectronic transistor source/drain formation using angled etching202211,508,812Multi-step lateral epitaxial overgrowth for low defect density III-N films202211,508,824Gallium nitride transistors with multiple threshold voltages and their methods of fabrication202211,502,191Transistors with backside field plate structures202211,502,124Filter-centric III-N films enabling RF filter integration with III-N transistors202211,489,061Integrated programmable gate radio frequency (RF) switch202211,476,345Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance202211,450,617Transmission line structures for III-N devices202211,437,255Epitaxial III-N nanoribbon structures for device fabrication202211,437,504Complementary group III-nitride transistors with complementary polarization junctions202211,430,873Self aligned gate connected plates for group III-Nitride devices and methods of fabrication202211,404,407Implants to enlarge Schottky diode cross-sectional area for lateral current conduction202211,398,545Single-mask, high-q performance metal-insulator-metal capacitor (MIMCAP)202211,387,328III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device202211,387,329Tri-gate architecture multi-nanowire confined transistor202211,387,327Silicide for group III-Nitride devices and methods of fabrication202211,380,679FET capacitor circuit architectures for tunable load and input matching202211,380,806Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers202211,373,995Group III-nitride antenna diode202211,362,172High aspect ratio non-planar capacitors formed via cavity fill202211,362,082Implanted substrate contact for in-process charging control202211,355,652Group III-nitride polarization junction diodes202211,342,232Fabrication of Schottky barrier diode using lateral epitaxial overgrowth202211,335,800Work function based approaches to transistor threshold voltage tuning202211,335,777Integrated circuit components with substrate cavities202211,335,801Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication202211,329,132Transistor with polarization layer superlattice for target threshold voltage tuning202211,323,092Film bulk acoustic resonator (FBAR) devices for high frequency RF filters202211,302,808III-V transistors with resistive gate contacts202211,295,992Tunnel polarization junction III-N transistors202211,233,053Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication202211,222,982Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping202211,218,133Film bulk acoustic resonator (FBAR) devices for high frequency RF filters202211,205,717Epitaxially fabricated heterojunction bipolar transistors202111,195,944Gallium nitride (GaN) transistor structures on a substrate202111,183,613Group III-nitride light emitting devices including a polarization junction202111,177,376III-N epitaxial device structures on free standing silicon mesas202111,158,712Field-effect transistors with buried gates and methods of manufacturing the same202111,145,648Enhancement/depletion device pairs and methods of producing the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to INTEL CORP (100)· patent assignee history
2021–2025Based in US· patent location history
2022Patents assigned to INTEL COROPRATION (1)· patent assignee history
2023–2024Patents assigned to TAHOE RES LTD (2)· patent assignee history
2024Patents assigned to GOOGLE LLC (1)· patent assignee history
2024Patents assigned to INTEL CORPROATION (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 100 | 2021–2025 |
| TAHOE RES LTD | 2 | 2023–2024 |
| GOOGLE LLC | 1 | 2024 |
| INTEL COROPRATION | 1 | 2022 |
| INTEL CORPROATION | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 103 | 2021–2025 |