Inventor
Wen-Jye Tsai
Inventor
Tainan, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1044%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1044%
C25DProcesses for the electrolytic or electrophoretic production of coatings11%
PatentTitleYear
6,620,725'Reduction of Cu line damage by two-step CMP'20036,319,831'Gap filling by two-step plating'20016,224,737'Method for improvement of gap filling capability of electrochemical deposition of copper'20016,140,241'Multi-step electrochemical copper deposition process with improved filling capability'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2003Patents assigned to TAIWAN SEMICONDUCTOR MFG (4)· patent assignee history
2000–2003Based in Tainan, TW· patent location history
2001Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 4 | 2000–2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 3 | 2000–2003 |
| Hsinchu, TW | 1 | 2001 |