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Inventor

Alfred C. Ipri

Inventor
Princeton, NJ, US

Overview

53→
Patents
1976–2002
Patent span
Electricity
Primary field (CPC H)

Patents· 53 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
G09GArrangements or circuits for control of indicating devices using static means to present variable information7%
G11CStatic stores5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H10BElectronic memory devices4%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
C23CCoating metallic material1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
6,417,825'Analog active matrix emissive display'20026,348,906'Line scanning circuit for a dual-mode display'20026,307,322'Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage'20016,229,506'Active matrix light emitting diode pixel structure and concomitant method'20016,104,041'Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors'20005,952,789'Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor'19995,932,892'High-voltage transistor'19995,736,752'Active matrix electroluminescent display pixel element having a field shield means between the pixel and the switch'19985,587,329'Method for fabricating a switching transistor having a capacitive network proximate a drift region'19965,076,667'High speed signal and power supply bussing for liquid crystal displays'19914,996,575'Low leakage silicon-on-insulator CMOS structure and method of making same'19914,965,646'Thin film transistor and crossover structure for liquid crystal displays'19904,947,221'Memory cell for a dense EPROM'19904,933,904'Dense EPROM having serially coupled floating gate transistors'19904,926,236'Multilayer interconnect and method of forming same'19904,918,498'Edgeless semiconductor device'19904,872,141'Radiation hard memory cell having monocrystalline and non-monocrystalline inverters'19894,864,380'Edgeless CMOS device'19894,828,365'Multicolor filter for producing purer white across a display device'19894,804,640'Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film'19894,791,464'Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same'19884,758,529'Method of forming an improved gate dielectric for a MOSFET on an insulating substrate'19884,722,912'Method of forming a semiconductor structure'19884,692,344'Method of forming a dielectric film and semiconductor device including said film'19874,658,495'Method of forming a semiconductor structure'19874,618,876'Electrically alterable, nonvolatile floating gate memory device'19864,608,591'Electrically alterable programmable nonvolatile floating gate memory device'19864,597,160'Method of fabricating a polysilicon transistor with a high carrier mobility'19864,577,215'Dual word line, electrically alterable, nonvolatile floating gate memory device'19864,566,025'CMOS Structure incorporating vertical IGFETS'19864,554,570'Vertically integrated IGFET device'19854,530,149'Method for fabricating a self-aligned vertical IGFET'19854,513,397'Electrically alterable, nonvolatile floating gate memory device'19854,442,447'Electrically alterable nonvolatile floating gate memory device'19844,323,910'MNOS Memory transistor'19824,282,556'Input protection device for insulated gate field effect transistor'19814,271,422'CMOS SOS With narrow ring shaped P silicon gate common to both devices'19814,263,057'Method of manufacturing short channel MOS devices'19814,259,779'Method of making radiation resistant MOS transistor'19814,244,001'Fabrication of an integrated injection logic device with narrow basewidth'19814,225,875'Short channel MOS devices and the method of manufacturing same'19804,217,688'Fabrication of an integrated injection logic device incorporating an MOS/bipolar current injector'19804,201,603'Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon'19804,200,878'Method of fabricating a narrow base-width bipolar device and the product thereof'19804,169,746'Method for making silicon on sapphire transistor utilizing predeposition of leads'19794,119,992'Integrated circuit structure and method for making same'19784,104,087'Method for fabricating MNOS memory circuits'19784,092,209'Silicon implanted and bombarded with phosphorus ions'19784,072,974'Silicon resistive device for integrated circuits'19784,050,965'Simultaneous fabrication of CMOS transistors and bipolar devices'19774,035,829'Semiconductor device and method of electrically isolating circuit components thereon'19774,016,016'Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices'19773,974,515'IGFET on an insulating substrate'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1988Patents assigned to RCA CORP (30)· patent assignee history
1976Based in Belle Mead, NJ, US· patent location history
1977–1978Patents assigned to US AIR FORCE (2)· patent assignee history
1977–2002Based in Princeton, NJ, US· patent location history
1978Based in Marlton, NJ, US· patent location history
1987–1990Based in Hopewell Township, Mercer County, NJ, US· patent location history
1988–1990Patents assigned to GEN ELECTRIC (9)· patent assignee history
1991–1998Patents assigned to SARNOFF DAVID RES CENTER (4)· patent assignee history
1999–2002Patents assigned to SARNOFF CORP (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RCA CORP301976–1988
GEN ELECTRIC91988–1990
SARNOFF CORP71999–2002
SARNOFF DAVID RES CENTER41991–1998
US AIR FORCE21977–1978
Locations
LocationPatentsSpan
Princeton, New Jersey, US421977–2002
Hopewell Township, Mercer County, New Jersey, US91987–1990
Marlton, New Jersey, US11978
Belle Mead, New Jersey, US11976