Inventor
Bencherki Mebarki
Inventor
Santa Clara, CA, US
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
C23CCoating metallic material11%
H10DInorganic electric semiconductor devices7%
H01JElectric discharge tubes or discharge lamps2%
B01DSeparation1%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
H05HPlasma technique1%
PatentTitleYear
10,950,448Film quality control in a linear scan physical vapor deposition process202110,927,450Methods and apparatus for patterning substrates using asymmetric physical vapor deposition202110,930,472Methods for forming a metal silicide interconnection nanowire structure202110,927,451Methods and apparatus for patterning substrates using asymmetric physical vapor deposition202110,916,433Methods of forming metal silicide layers and metal silicide layers formed therefrom202110,815,561Method and apparatus for asymmetric selective physical vapor deposition202010,643,895Self-aligned interconnects formed using subtractive techniques202010,636,704Seam-healing method upon supra-atmospheric process in diffusion promoting ambient202010,636,655Methods for asymmetric deposition of metal on high aspect ratio nanostructures202010,593,592Laminate and core shell formation of silicide nanowire202010,438,849Microwave anneal to improve CVD metal gap-fill and throughput201910,354,882Low thermal budget crystallization of amorphous metal silicides201910,204,764Methods for forming a metal silicide interconnection nanowire structure201910,049,927Seam-healing method upon supra-atmospheric process in diffusion promoting ambient201810,014,174Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning20189,865,466'Silicide phase control by confinement'20189,847,252Methods for forming 2-dimensional self-aligned vias20179,761,489'Self-aligned interconnects formed using substractive techniques'20179,659,771'Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning'20179,631,278'Metal silicide formation through an intermediate metal halogen compound'20179,613,859'Direct deposition of nickel silicide nanowire'20179,337,051'Method for critical dimension reduction using conformal carbon films'20168,551,880'Ammonia-based plasma treatment for metal fill in narrow features'20138,298,887'High mobility monolithic p-i-n diodes'20128,084,310'Self-aligned multi-patterning for advanced critical dimension contacts'20117,972,959'Self aligned double patterning flow with non-sacrificial features'20117,378,062'Object processing apparatus and plasma facility comprising the same'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008Based in Champs sur Marne, FR· patent location history
2011–2021Patents assigned to APPLIED MATERIALS INC (26)· patent assignee history
2011–2013Patents assigned to MEBARKI BENCHERKI (3)· patent assignee history
2011Patents assigned to BENCHER CHRISTOPHER DENNIS (1)· patent assignee history
2011–2021Based in Santa Clara, CA, US· patent location history
2012Patents assigned to HAN XINHAI (1)· patent assignee history
2013Patents assigned to KHANDELWAL AMIT (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 26 | 2011–2021 |
| MEBARKI BENCHERKIself | 3 | 2011–2013 |
| BENCHER CHRISTOPHER DENNIS | 1 | 2011 |
| HAN XINHAI | 1 | 2012 |
| KHANDELWAL AMIT | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Santa Clara, California, US | 26 | 2011–2021 |
| Champs sur Marne, FR | 1 | 2008 |