Inventor
Hideshi Kuwabara
Inventor
Zama, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation11%
H10DInorganic electric semiconductor devices10%
H04NPictorial communication, e.g. television6%
H10BElectronic memory devices6%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C23CCoating metallic material5%
H01JElectric discharge tubes or discharge lamps5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
11,009,909Electronic device202110,998,512Electronic device, display device, method for manufacturing the same, and system including a plurality of display devices202110,957,723Vehicle, display device and manufacturing method for a semiconductor device202110,665,628Photoelectric conversion apparatus, camera, and moving body202010,559,464Method for manufacturing photoelectric conversion device202010,553,634Photoelectric conversion apparatus and camera20209,171,880'Photoelectric conversion device, method of manufacturing the same, and camera'20159,093,346'Photoelectric conversion device and imaging system'20158,917,984'Photoelectric conversion apparatus, focus detection apparatus, and image pickup system'20147,247,899'Semiconductor device, photoelectric conversion device and method of manufacturing same'20076,156,657'Method of treating active material'20005,975,685'Ink jet recording head having an oriented p-n junction diode, and recording apparatus using the head'19995,963,812'Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion'19995,760,421'Semiconductor device including indices for identifying positions of elements in the device.'19985,610,435'Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio'19975,580,808'Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam'19965,569,614'Method of forming metal pattern including a schottky diode'19965,534,069'Method of treating active material'19965,527,730'Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam'19965,433,813'Semiconductor device manufacturing apparatus'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2020Patents assigned to CANON KK (16)· patent assignee history
1995–1999Based in Zama, JP· patent location history
1996Patents assigned to CONON KABUSHIKI KAISHA (1)· patent assignee history
1996–2021Based in Atsugi, JP· patent location history
2007–2021Based in Kanagawa, JP· patent location history
2014–2020Based in Yamato, JP· patent location history
2021Patents assigned to SEMICONDUCTOR ENERGY LAB (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 16 | 1995–2020 |
| SEMICONDUCTOR ENERGY LAB | 3 | 2021 |
| CONON KABUSHIKI KAISHA | 1 | 1996 |
Locations
| Location | Patents | Span |
|---|---|---|
| Zama, JP | 8 | 1995–1999 |
| Yamato, JP | 6 | 2014–2020 |
| Kanagawa, JP | 3 | 2007–2021 |
| Atsugi, JP | 3 | 1996–2021 |