LexDanaLexDanabeta
Inventor

Ching-Sung Yang

Inventor
Hsinchu, TW

Overview

64→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 64 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices32%
G11CStatic stores30%
H10DInorganic electric semiconductor devices24%
G06FElectric digital data processing3%
H01LSemiconductor devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
G01DMeasuring not specially adapted for a specific variable1%
G06KGraphical data reading1%
G06VImage or video recognition or understanding1%
PatentTitleYear
10,685,728Code generating apparatus and one time programming block202010,476,680Electronic device with self-protection and anti-cloning capabilities and related method201910,181,357Code generating apparatus and one time programming block201910,020,268Random number generator device and control method thereof20189,638,549'Integrated capacitance sensing module and associated system'20179,466,392'Memory array with memory cells arranged in pages'20169,214,242'Programming method for NAND flash memory device to reduce electrons in channels'20158,941,167'Erasable programmable single-ploy nonvolatile memory'20158,724,363'Anti-fuse memory ultilizing a coupling channel and operating method thereof'20148,705,289'Flash memory apparatus with programming voltage control generators'20148,681,528'One-bit memory cell for nonvolatile memory and associated controlling method'20148,638,589'Operating method for non-volatile memory unit'20148,625,350'Logic-based multiple time programming memory cell'20148,604,538'Non-volatile semiconductor memory device with intrinsic charge trapping layer'20138,599,614'Programming method for NAND flash memory device to reduce electrons in channels'20138,592,886'Erasable programmable single-ploy nonvolatile memory'20138,497,172'Method of manufacturing a read-only memory device with contacts formed therein'20138,466,519'Read-only memory device with contacts formed therein'20138,456,916'Non-volatile memory unit cell with improved sensing margin and reliability'20138,390,056'Non-volatile semiconductor memory device with intrinsic charge trapping layer'20138,363,475'Non-volatile memory unit cell with improved sensing margin and reliability'20138,355,282'Logic-based multiple time programming memory cell'20138,344,445'Non-volatile semiconductor memory cell with dual functions'20138,339,831'Single polysilicon non-volatile memory'20128,199,578'Single polysilicon layer non-volatile memory and operating method thereof'20128,174,063'Non-volatile semiconductor memory device with intrinsic charge trapping layer'20127,937,072'Mobile phone accessing system and related storage device'20117,663,904'Operating method of one-time programmable read only memory'20107,491,607'Method of fabricating flash memory cell'20097,462,902'Nonvolatile memory'20087,452,775'Non-volatile memory device and manufacturing method and operating method thereof'20087,436,028'One-time programmable read only memory and operating method thereof'20087,397,080'Non-volatile memory'20087,391,078'Non-volatile memory and manufacturing and operating method thereof'20087,335,559'Fabricating method of non-volatile memory'20087,336,539'Method of operating flash memory cell'20087,291,882'Programmable and erasable digital switch device and fabrication method and operating method thereof'20077,274,062'Non-volatile memory and fabricating method and operating method thereof'20077,235,839'Flash memory cell and fabricating method thereof'20077,154,142'Non-volatile memory device and manufacturing method and operating method thereof'20066,952,369'Method for operating a NAND-array memory module composed of P-type memory cells'20056,908,818'Contactless channel write/erase flash memory cell and its fabrication method'20056,898,126'Method of programming a flash memory through boosting a voltage level of a source line'20056,888,190'EEPROM with source line voltage stabilization mechanism'20056,885,587'Single poly embedded EPROM'20056,882,574'Single poly UV-erasable programmable read only memory'20056,847,087'Bi-directional Fowler-Nordheim tunneling flash memory'20056,839,284'Method of programming and erasing a non-volatile semiconductor memory'20056,750,504'Low voltage single-poly flash memory cell and array'20046,717,206'Structure of an embedded channel write/erase flash memory cell and fabricating method thereof'20046,710,397'Nonvolatile semiconductor memory device having divided bit lines'20046,711,064'Single-poly EEPROM'20046,678,190'Single poly embedded eprom'20046,677,198'Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof'20046,654,284'Channel write/erase flash memory cell and its manufacturing method'20036,617,637'Electrically erasable programmable logic device'20036,534,817'Contactless channel write/erase flash memory cell and its fabrication method'20036,504,763'Nonvolatile semiconductor memory capable of random programming'20036,501,685'Channel write/erase flash memory cell and its manufacturing method'20026,489,202'Structure of an embedded channel write-erase flash memory cell and fabricating method thereof'20026,490,196'Method for operating a nonvolatile memory having embedded word lines'20026,448,607'Nonvolatile memory having embedded word lines'20026,441,443'Embedded type flash memory structure and method for operating the same'20026,418,060'Method of programming and erasing non-volatile memory cells'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Patents assigned to EMEMORY TECHNOLOGY INC (45)· patent assignee history
2002–2020Based in Hsinchu, TW· patent location history
2002–2005Based in Changhua County, TW· patent location history
2002Based in Nei Hu, TW· patent location history
2005–2010Patents assigned to POWERCHIP SEMICONDUCTOR CORP (15)· patent assignee history
2012–2015Patents assigned to YANG CHING-SUNG (17)· patent assignee history
2012–2015Patents assigned to CHEN HSIN-MING (11)· patent assignee history
2012–2015Patents assigned to WANG SHIH-CHEN (10)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
EMEMORY TECHNOLOGY INC452002–2020
YANG CHING-SUNGself172012–2015
POWERCHIP SEMICONDUCTOR CORP152005–2010
CHEN HSIN-MING112012–2015
WANG SHIH-CHEN102012–2015
Locations
LocationPatentsSpan
Hsinchu, TW482002–2020
Changhua County, TW152002–2005
Nei Hu, TW12002