Inventor
Jae-Suk Lee
Inventor
Icheon-si, KR
Overview
Patents· 71 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10DInorganic electric semiconductor devices9%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds7%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds6%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
C07DHeterocyclic compounds3%
G11BInformation storage based on relative movement between record carrier and transducer3%
H01QAntennas, i.e. radio aerials3%
PatentTitleYear
11,086,409System, device, and method for inputting information on basis of sound wave202110,703,858Block copolymer materials containing polyhedral oligomeric silsesquioxane(POSS)202010,700,422Portable device and near field communication chip202010,581,140Antenna module having metal frame antenna segment and electronic device including the same202010,333,200Portable device and near field communication chip201910,256,526Near field communication antenna, near field communication device and mobile device having the same201910,137,440Core-shell cobalt catalysts for Fischer-Tropsch synthesis reaction and preparing method thereof201810,093,752Homopolymer nanoparticles by self-emulsion polymerization reaction and preparation method thereof201810,063,538System for secure login, and method and apparatus for same201810,046,290Shell-and-multi-triple concentric-tube reactor and heat exchanger20189,822,311'Method for preparing synthetic fuel from natural gas of stranded gas field and associated gas from oil and gas fields by GTL-FPSO process'20179,782,755'Nickel supported catalyst for combined steam and carbon dioxide reforming with natural gas'20179,634,253'Donor-acceptor conjugated polymer and organic electronic device comprising the same'20179,537,983'Housing of a mobile device, near field communication transceiver and mobile device'20179,373,791'Hole transport polymeric compound and polymer light emitting diode using the same'20169,311,966'Hemmed seal for a storage device enclosure'20169,242,228'Process for preparing nickel based catalysts for SCR of natural gas'20169,242,230'Process for preparing cobalt based catalysts for fischer-tropsch synthesis'20169,159,497'Low band gap copolymer and method for manufacturing same'20159,150,601'Blue-light-emitting iridium complex, iridium complex monomer, phosphorus polymer, and organic electroluminescence device using same'20159,040,655'Direct CH arylation method using palladium-based catalyst'20158,487,070'Sulfonated poly(arylene ether) having crosslinkable moiety combined in chain of polymer, sulfonated poly(arylene ether) having crosslinkable moieties combined in polymer and at polymer end group, and polymer electrolyte membrane using sulfonated poly(arylene ether)'20138,110,641'Anionic polymerization method for styrene derivative containing pyridine as functional group'20128,110,642'Synthesis of vinylphenylpyridine and living anionic polymerization'20128,018,689'Hard disk drive with thermal deformation prevention plate'20117,732,560'Terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s'20107,727,690'Iridium complex, carbazole derivatives and copolymer having the same'20107,687,394'Method for forming inter-layer dielectric of low dielectric constant and method for forming copper wiring using the same'20107,670,948'Semiconductor device having diffusion barriers and a method of preventing diffusion of copper in a metal interconnection of a semiconductor device'20107,622,540'Metal carbonate initiator and method for polymerizing isocyanates using the same'20097,605,471'Semiconductor devices and methods for manufacturing the same'20097,569,495'Semiconductor devices and methods of manufacturing the same'20097,514,793'Metal interconnection lines of semiconductor devices and methods of forming the same'20097,501,706'Semiconductor devices to reduce stress on a metal interconnect'20097,485,555'Methods for forming a P-type polysilicon layer in a semiconductor device'20097,468,319'Method for preventing a metal corrosion in a semiconductor device'20087,432,203'Methods for fabricating a metal layer pattern'20087,425,593'Amphiphilic triblock copolymers comprising poly(2-vinylpyridine) block and poly(alkyl isocyanate) block, and the preparation method thereof'20087,416,982'Semiconductor devices and methods for manufacturing the same'20087,407,884'Method for forming an aluminum contact'20087,402,500'Methods of forming shallow trench isolation structures in semiconductor devices'20087,391,588'Hard disk drive connector having connector pins that deform away from a central shorting post in response to an external force'20087,368,514'Siloxane monomer containing trifluorovinylether group and sol-gel hybrid polymer prepared by using the same'20087,364,968'Capacitor in semiconductor device and manufacturing method'20087,341,942'Method for forming metal line of semiconductor device'20087,338,855'Method for fabricating semiconductor device'20087,327,530'Hard disk drive having disk damper and disk protector'20087,314,814'Semiconductor devices and methods of fabricating the same'20087,300,862'Method for manufacturing semiconductor device'20077,283,323'Damping structure of a hard disk drive'20077,223,675'Method of forming pre-metal dielectric layer'20077,202,184'Method for fabricating semiconductor device'20077,186,639'Metal interconnection lines of semiconductor devices and methods of forming the same'20077,173,155'Terphenyl dihalide monomers having sulfonate groups and process for preparing the same'20077,135,536'Production method of polyisocyanate by end capping with acyl chloride'20067,087,520'Method for fabricating metal wiring'20067,074,716'Method of manufacturing a semiconductor device'20067,030,005'Method of manufacturing semiconductor device'20067,018,907'Methods for forming shallow trench isolation structures'20066,949,475'Methods to reduce stress on a metal interconnect'20056,916,680'Method for fabricating image sensor'20056,790,767'Method for formation of copper diffusion barrier film using aluminum'20046,716,735'Method for forming metal lines of semiconductor device'20046,660,821'Vinyl-phenyl pyridine monomers and polymers prepared thereform'20036,657,299'Semiconductor with a stress reduction layer and manufacturing method therefor'20036,649,488'Method of shallow trench isolation'20036,569,978'Anionic polymerization of functionalized styrene derivatives containing carbazole'20036,545,159'Vinyl-phenyl pyridine monomers and polymers prepared therefrom'20036,512,076'Poly (arylene ether sulfide) and poly (arylene ether sulfone) for optical device and method for preparing the same'20036,348,415'Planarization method for semiconductor device'20025,308,704'Cell adhesive material and method for producing same'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2010Patents assigned to DONGBU ELECTRONICS CO LTD (25)· patent assignee history
2003–2016Patents assigned to KWANGJU INST SCI & TECH (17)· patent assignee history
2003–2010Based in Icheon-si, KR· patent location history
2003Based in Kwangju, KR· patent location history
2004–2021Based in Seoul, KR· patent location history
2006–2020Based in Gwangju, KR· patent location history
2007–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (9)· patent assignee history
2007–2020Based in Suwon-si, KR· patent location history
2012–2017Patents assigned to LEE JAE-SUK (5)· patent assignee history
2016–2018Patents assigned to KOREA INST SCI & TECH (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DONGBU ELECTRONICS CO LTD | 25 | 2002–2010 |
| KWANGJU INST SCI & TECH | 17 | 2003–2016 |
| SAMSUNG ELECTRONICS CO LTD | 9 | 2007–2020 |
| KOREA INST SCI & TECH | 6 | 2016–2018 |
| LEE JAE-SUKself | 5 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Icheon-si, KR | 21 | 2003–2010 |
| Gwangju, KR | 17 | 2006–2020 |
| Suwon-si, KR | 12 | 2007–2020 |
| Seoul, KR | 9 | 2004–2021 |
| Kwangju, KR | 4 | 2003 |