Inventor
LAERTIS ECONOMIKOS
Inventor
US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices27%
H10DInorganic electric semiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10BElectronic memory devices9%
H10NElectric solid-state devices not otherwise provided for9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
12,557,554Methods for fabricating MRAM with void free interlayer dielectric202612,417,944Formation of trench silicide source or drain contacts without gate damage202511,456,382Transistor comprising an air gap positioned adjacent a gate electrode202211,443,982Formation of trench silicide source or drain contacts without gate damage2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to IBM (2)· patent assignee history
2022Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history
2022–2026Based in US· patent location history
2026Patents assigned to HEFECHIP CORPORATION LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 2 | 2022–2025 |
| GLOBALFOUNDRIES US INC | 1 | 2022 |
| HEFECHIP CORPORATION LTD | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 4 | 2022–2026 |