Inventor
Tetsu Kachi
Inventor
Nisshin, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H01LSemiconductor devices14%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
B82YSpecific uses or applications of nanostructures8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H05BElectric heating3%
H10BElectronic memory devices3%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%
PatentTitleYear
10,121,663Semiconductor device and method for producing same20189,818,856'Semiconductor device with high electron mobility transistor'20179,735,260'III-V HEMT devices'20179,337,267'Semiconductor device'20169,184,271'III-V HEMT devices'20158,299,498'Semiconductor device having hetero junction'20128,222,675'Nitride semiconductor device including gate insulating portion containing AIN'20128,188,514'Transistor'20128,110,870'Semiconductor device'20128,008,749'Semiconductor device having vertical electrodes structure'20117,897,987'Light-emitting device including light-emitting diode and stacked light-emitting phosphor layers'20117,800,130'Semiconductor devices'20107,777,252'III-V hemt devices'20107,342,364'Light source'20087,211,839'Group III nitride semiconductor device'20077,084,432'Nitride semiconductor light emitting diode'20066,960,485'Light-emitting device using a group III nitride compound semiconductor and a method of manufacture'20056,936,484'Method of manufacturing semiconductor device and semiconductor device'20056,649,943'Group III nitride compound semiconductor light-emitting element'20035,889,806'Group III nitride compound semiconductor laser diodes'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2011Patents assigned to TOYODA GOSEI KK (5)· patent assignee history
1999–2012Based in Aichi, JP· patent location history
2005–2016Patents assigned to TOYOTA CHUO KENKYUSHO KK (5)· patent assignee history
2006–2017Based in Nisshin, JP· patent location history
2010–2017Patents assigned to TOYOTA MOTOR CO LTD (9)· patent assignee history
2011Based in Nagoya, JP· patent location history
2012–2015Patents assigned to KACHI TETSU (5)· patent assignee history
2012–2015Patents assigned to SUGIMOTO MASAHIRO (5)· patent assignee history
2012Based in Nissin, JP· patent location history
2016–2018Based in Nagakute-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYOTA MOTOR CO LTD | 9 | 2010–2017 |
| KACHI TETSUself | 5 | 2012–2015 |
| SUGIMOTO MASAHIRO | 5 | 2012–2015 |
| TOYODA GOSEI KK | 5 | 1999–2011 |
| TOYOTA CHUO KENKYUSHO KK | 5 | 2005–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nisshin, JP | 10 | 2006–2017 |
| Aichi, JP | 6 | 1999–2012 |
| Nagakute-shi, JP | 2 | 2016–2018 |
| Nissin, JP | 1 | 2012 |
| Nagoya, JP | 1 | 2011 |