Inventor
Truls Lowgren
Inventor
Malmo, SE
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers20%
B82YSpecific uses or applications of nanostructures17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10DInorganic electric semiconductor devices13%
H01LSemiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units7%
H10BElectronic memory devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
9,419,183'Nanowire sized opto-electronic structure and method for manufacturing the same'20169,312,442'Nanowire structure and method for manufacturing the same'20169,117,990'Nanowire LED structure and method for manufacturing the same'20159,096,429'Nanoelectronic structure and method of producing such'20159,087,896'Method of producing precision vertical and horizontal layers in a vertical semiconductor structure'20158,937,295'Nanowire sized opto-electronic structure and method for manufacturing the same'20158,796,119'Nanoelectronic structure and method of producing such'20148,669,125'Nanowire LED structure and method for manufacturing the same'20148,551,834'Method of producing precision vertical and horizontal layers in a vertical semiconductor structure'20138,455,857'Nanoelectronic structure and method of producing such'20138,350,251'Nanowire sized opto-electronic structure and method for manufacturing the same'20138,178,403'Method of producing precision vertical and horizontal layers in a vertical semiconductor structure'20128,067,299'Nanoelectronic structure and method of producing such'20118,063,450'Assembly of nanoscaled field effect transistors'20118,049,203'Nanoelectronic structure and method of producing such'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2015Patents assigned to QUNANO AB (9)· patent assignee history
2011–2015Patents assigned to OHLSSON JONAS (6)· patent assignee history
2011–2015Patents assigned to LOWGREN TRULS (5)· patent assignee history
2011–2015Patents assigned to LIND ERIK (4)· patent assignee history
2011–2013Based in Malmö, SE· patent location history
2013–2016Patents assigned to GLO AB (6)· patent assignee history
2013–2016Based in Malmo, SE· patent location history
2013–2016Based in Palo Alto, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| QUNANO AB | 9 | 2011–2015 |
| GLO AB | 6 | 2013–2016 |
| OHLSSON JONAS | 6 | 2011–2015 |
| LOWGREN TRULSself | 5 | 2011–2015 |
| LIND ERIK | 4 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Malmo, SE | 6 | 2013–2016 |
| Malmö, SE | 5 | 2011–2013 |
| Palo Alto, California, US | 4 | 2013–2016 |