Inventor
Toshimitsu Kariya
Inventor
Nagahama, JP
Overview
37→
Patents
1989–2007
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation24%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution24%
Y02PClimate change mitigation technologies in the production or processing of goods19%
G03GElectrography8%
C23CCoating metallic material7%
H10DInorganic electric semiconductor devices6%
H01JElectric discharge tubes or discharge lamps5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
C25DProcesses for the electrolytic or electrophoretic production of coatings1%
PatentTitleYear
7,301,215'Photovoltaic device'20077,189,917'Stacked photovoltaic device'20076,472,248'Microcrystalline series photovoltaic element and process for fabrication of same'20026,344,608'Photovoltaic element'20026,215,061'Photoconductive thin film, and photovoltaic device making use of the same'20016,177,711'Photoelectric conversion element'20016,140,570'Photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic element'20006,123,824'Process for producing photo-electricity generating device'20006,107,116'Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction'20005,849,108'Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction'19985,714,010'Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same'19985,656,098'Photovoltaic conversion device and method for producing same'19975,599,403'Semiconductor device containing microcrystalline germanium & method for producing the same'19975,527,391'Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method'19965,527,396'Deposited film forming apparatus'19965,520,740'Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same'19965,510,151'Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space'19965,510,631'Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same'19965,456,762'Photoelectric conversion elements'19955,439,533'Photovoltaic device, method of producing the same and generating system using the same'19955,421,909'Photovoltaic conversion device'19955,418,680'Apparatus for repairing an electrically short-circuited semiconductor device'19955,417,770'Photovoltaic device and a forming method thereof'19955,401,330'Photovoltaic element'19955,371,380'Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less'19945,362,684'Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same'19945,358,811'Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron'19945,284,525'Solar cell'19945,281,541'Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method'19945,130,170'Microwave PCVD method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation'19925,114,770'Method for continuously forming functional deposited films with a large area by a microwave plasma CVD method'19925,087,542'Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used'19924,981,766'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material'19914,906,542'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'19904,906,543'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'19904,886,723'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'19894,882,251'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2007Patents assigned to CANON KK (37)· patent assignee history
1989–1998Based in Nagahama, JP· patent location history
1995–2001Based in Nara, JP· patent location history
2000Based in Nishikamo-gun, JP· patent location history
2001–2007Based in Kyoto, JP· patent location history
2007Based in Hiratsuka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 37 | 1989–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagahama, JP | 24 | 1989–1998 |
| Nara, JP | 7 | 1995–2001 |
| Kyoto, JP | 4 | 2001–2007 |
| Hiratsuka, JP | 1 | 2007 |
| Nishikamo-gun, JP | 1 | 2000 |