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Inventor

Koichi Orito

Inventor
Oshu, JP

Overview

2→
Patents
2006–2010
Patent span
Chemistry
Primary field (CPC C)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material67%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
PatentTitleYear
7,825,039'Vertical plasma processing method for forming silicon containing film'20107,094,708'Method of CVD for forming silicon nitride film on substrate'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2010Patents assigned to TOKYO ELECTRON LTD (2)· patent assignee history
2006Based in Tokyo, JP· patent location history
2010Based in Oshu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD22006–2010
Locations
LocationPatentsSpan
Oshu, JP12010
Tokyo, JP12006