Inventor

Saburou Kanai

Inventor

Hikari, JP

Overview

2000–2014

Patent span

Electricity

Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary

H01JElectric discharge tubes or discharge lamps43%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1034%

C23CCoating metallic material9%

E03CDomestic plumbing installations for fresh water or waste water7%

C23FNon-mechanical removal of metallic material from surface2%

G11BInformation storage based on relative movement between record carrier and transducer2%

Y10TTechnical subjects covered by former us classification2%

PatentTitleYear

8,795,467'Plasma processing apparatus and method'2014 8,062,473'Plasma processing apparatus and method'2011 7,833,429'Plasma processing method'2010 7,740,739'Plasma processing apparatus and method'2010 7,608,162'Plasma processing apparatus and method'2009 7,288,166'Plasma processing apparatus'2007 7,183,715'Method for operating a semiconductor processing apparatus'2007 7,138,606'Wafer processing method'2006 6,914,207'Plasma processing method'2005 6,895,179'Wafer stage for wafer processing apparatus'2005 6,867,144'Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield'2005 6,825,617'Semiconductor processing apparatus'2004 6,759,338'Plasma processing apparatus and method'2004 6,756,737'Plasma processing apparatus and method'2004 6,716,301'Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe'2004 6,677,167'Wafer processing apparatus and a wafer stage and a wafer processing method'2004 6,649,021'Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield'2003 6,646,233'Wafer stage for wafer processing apparatus and wafer processing method'2003 6,491,832'Method for processing specimens'2002 6,413,876'Method for plasma processing high-speed semiconductor circuits with increased yield'2002 6,388,382'Plasma processing apparatus and method'2002 6,172,321'Method and apparatus for plasma processing apparatus'2001 6,034,346'Method and apparatus for plasma processing apparatus'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2009Patents assigned to HITACHI LTD (12)· patent assignee history

2000–2014Based in Hikari, JP· patent location history

2003–2014Patents assigned to HITACHI HIGH TECH CORP (11)· patent assignee history

2011–2014Patents assigned to KANAI SABUROU (2)· patent assignee history

2011–2014Patents assigned to KANEKIYO TADAMITSU (2)· patent assignee history

2011–2014Patents assigned to KIHARA HIDEKI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	12	2000–2009
HITACHI HIGH TECH CORP	11	2003–2014
KANAI SABUROUself	2	2011–2014
KANEKIYO TADAMITSU	2	2011–2014
KIHARA HIDEKI	2	2011–2014

Locations

Location	Patents	Span
Hikari, JP	23	2000–2014