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Inventor

Basab Banerjee

Inventor
Austin, TX, US

Overview

3→
Patents
2004–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices60%
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices20%
PatentTitleYear
9,419,101'Multi-layer spacer used in finFET'20166,995,437'Semiconductor device with core and periphery regions'20066,780,708'METHOD OF FORMING CORE AND PERIPHERY GATES INCLUDING TWO CRITICAL MASKING STEPS TO FORM A HARD MASK IN A CORE REGION THAT INCLUDES A CRITICAL DIMENSION LESS THAN ACHIEVABLE AT A RESOLUTION LIMIT OF LITHOGRAPHY'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2006Patents assigned to ADVANCED MICRO DEVICES INC (2)· patent assignee history
2004–2006Based in Austin, TX, US· patent location history
2016Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history
2016Based in Ballston Lake, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ADVANCED MICRO DEVICES INC22004–2006
GLOBALFOUNDRIES INC12016
Locations
LocationPatentsSpan
Austin, Texas, US22004–2006
Ballston Lake, New York, US12016