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Inventor

Yasuhiko Sugiyama

Inventor
Chiba, JP

Overview

42→
Patents
1995–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps50%
G01NInvestigating or analysing materials by determining their chemical or physical properties13%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G01QScanning-probe techniques or apparatus3%
G21KHandling of particles or ionising radiation not otherwise provided for3%
Y02TClimate change mitigation technologies related to transportation3%
A61KPreparations for medical, dental or toiletry purposes1%
A61QSpecific use of cosmetics or similar toiletry preparations1%
B60LPropulsion of electrically-propelled vehicles1%
PatentTitleYear
11,118,014Polymer compound, intermediate composition, negative electrode, electricity storage device, and method for producing polymer compound2021D0917223Coffee grinder202110,945,942Starting material for cosmetics202110,886,867Inverter control device202110,176,964Focused ion beam apparatus201910,056,232Charged particle beam apparatus and plasma ignition method20189,793,085'Focused ion beam apparatus'20179,773,646'Plasma ion source and charged particle beam apparatus'20179,773,637'Plasma ion source and charged particle beam apparatus'20179,773,634'Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus'20179,640,361'Emitter structure, gas ion source and focused ion beam system'20179,583,299'Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus'20179,418,817'Focused ion beam apparatus and control method thereof'20169,378,858'Repair apparatus'20169,336,979'Focused ion beam apparatus with precious metal emitter surface'20169,245,712'Focused ion beam system'20169,129,771'Emitter structure, gas ion source and focused ion beam system'20159,111,717'Ion beam apparatus'20158,999,178'Method for fabricating emitter'20158,963,100'Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) pa'20158,822,911'Focused ion beam apparatus and method of adjusting ion beam optics'20148,764,994'Method for fabricating emitter'20148,274,063'Composite focused ion beam device, process observation method using the same, and processing method'20128,269,194'Composite focused ion beam device, and processing observation method and processing method using the same'20127,576,340'Focused ion beam processing method'20097,297,944'Ion beam device and ion beam processing method, and holder member'20077,276,691'Ion beam device and ion beam processing method'20077,172,839'Photomask correction method using composite charged particle beam, and device used in the correction method'20076,870,161'Apparatus for processing and observing a sample'20056,838,685'Ion beam apparatus, ion beam processing method and sample holder member'20056,489,612'Method of measuring film thickness'20026,472,881'Liquid metal ion source and method for measuring flow impedance of liquid metal ion source'20026,437,330'Method and apparatus for adjusting a charged particle beam of a beam optical system'20026,384,418'Sample transfer apparatus and sample stage'20026,331,712'Section formation observing method'20016,300,628'Focused ion beam machining method and device thereof'20016,281,496'Observing/forming method with focused ion beam and apparatus therefor'20016,177,670'Method of observing secondary ion image by focused ion beam'20016,118,122'Ion beam working apparatus'20005,969,355'Focused ion beam optical axis adjustment method and focused ion beam apparatus'19995,917,186'Focused ion beam optical axis adjustment method and focused ion beam apparatus'19995,438,197'Focused ion beam apparatus'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2002Patents assigned to SEIKO INSTR INC (12)· patent assignee history
1995–2021Based in Tokyo, JP· patent location history
1999–2015Based in Chiba, JP· patent location history
2005–2012Patents assigned to SII NANOTECHNOLOGY INC (8)· patent assignee history
2012–2015Patents assigned to SUGIYAMA YASUHIKO (3)· patent assignee history
2014–2019Patents assigned to HITACHI HIGH TECH SCIENCE CORP (11)· patent assignee history
2016–2017Patents assigned to HITACHI HIGH-TECH SCIENCE CORP (5)· patent assignee history
2021Based in Kariya, JP· patent location history
2021Based in Yokohama, JP· patent location history
2021Based in Nishio, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEIKO INSTR INC121995–2002
HITACHI HIGH TECH SCIENCE CORP112014–2019
SII NANOTECHNOLOGY INC82005–2012
HITACHI HIGH-TECH SCIENCE CORP52016–2017
SUGIYAMA YASUHIKOself32012–2015
Locations
LocationPatentsSpan
Chiba, JP201999–2015
Tokyo, JP191995–2021
Kariya, JP12021
Yokohama, JP12021
Nishio, JP12021