Inventor

Hiraku Chakihara

Inventor
Kanagawa, JP

Overview

67→
Patents
2003–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 67 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices25%
H10BElectronic memory devices24%
H01LSemiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
G11CStatic stores6%
PatentTitleYear
11,081,491Semiconductor device and method of manufacturing the same202110,056,402Semiconductor device201810,002,768Semiconductor device and manufacturing method thereof20189,831,093Semiconductor device and manufacturing method thereof20179,583,502'Method of manufacturing a semiconductor device'20179,570,610'Method of manufacturing semiconductor device'20179,543,315'Semiconductor device'20179,520,504'Semiconductor device and method of manufacturing the same'20169,443,991'Semiconductor device and method of manufacturing the same'20169,412,878'Semiconductor device and manufacturing method thereof'20169,379,127'Semiconductor device and manufacturing method of semiconductor device'20169,373,630'Method of manufacturing semiconductor device'20169,324,883'Semiconductor device and method of manufacturing the same'20169,324,726'Method for manufacturing a semiconductor device'20169,324,725'Semiconductor device and a manufacturing method thereof'20169,299,569'Manufacturing method of semiconductor device'20169,275,956'Semiconductor integrated circuit device and process for manufacturing the same'20169,263,291'Method of manufacturing semiconductor device'20169,214,350'Semiconductor device having a capacitive element'20159,196,748'Semiconductor device and a manufacturing method thereof'20159,171,727'Method of manufacturing a semiconductor device'20159,099,334'Method of manufacturing semiconductor device and semiconductor device'20159,093,319'Semiconductor device and manufacturing method thereof'20159,059,100'Semiconductor integrated circuit device and process for manufacturing the same'20158,969,943'Semiconductor device and manufacturing method of semiconductor device'20158,951,860'Manufacturing method of semiconductor device'20158,896,053'Semiconductor device and method of manufacturing the same'20148,853,036'Semiconductor device and method of manufacturing the same'20148,809,934'Semiconductor device and a manufacturing method thereof'20148,652,895'Semiconductor memory device and a method of manufacturing the same'20148,633,530'Semiconductor device and method of manufacturing the same'20148,617,974'Method of manufacturing semiconductor device and semiconductor device'20138,569,107'Semiconductor integrated circuit device and process for manufacturing the same'20138,569,144'Method of manufacturing semiconductor integrated circuit device'20138,558,352'Semiconductor integrated circuit device and process for manufacturing the same'20138,546,867'Non-volatile memory semiconductor device'20138,507,340'Method of fabricating a nonvolatile memory'20138,476,138'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20138,395,203'Semiconductor device and a manufacturing method thereof'20138,373,216'Semiconductor device and method of manufacturing the same'20138,357,968'Non-volatile memory semiconductor device'20138,183,091'Semiconductor integrated circuit device and process for manufacturing the same'20128,133,795'Method of manufacturing semiconductor integrated circuit device'20127,985,678'Method of manufacturing a semiconductor integrated circuit device'20117,981,738'Semiconductor memory device and a method of manufacturing the same'20117,972,920'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20117,833,905'Method of manufacturing a semiconductor integrated circuit device'20107,829,952'Semiconductor memory device and a method of manufacturing the same'20107,701,020'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20107,696,608'Semiconductor integrated circuit device and process for manufacturing the same'20107,598,133'Semiconductor memory device and a method of manufacturing the same'20097,595,266'Method of manufacturing a semiconductor integrated circuit device'20097,495,289'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20097,411,238'Semiconductor integrated circuit device and a method of manufacturing the same'20087,402,475'Method of manufacturing a semiconductor integrated circuit device'20087,327,014'Semiconductor integrated circuit device and process for manufacturing the same'20087,279,754'Semiconductor memory device and a method of manufacturing the same'20077,221,056'Semiconductor integrated circuit device and manufacturing method thereof'20077,190,031'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20077,179,737'Semiconductor device and a method of manufacturing the same'20077,161,215'Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20077,154,164'Semiconductor integrated circuit device and process for manufacturing the same'20067,145,194'Semiconductor integrated circuit device and a method of manufacturing the same'20067,112,870'Semiconductor integrated circuit device including dummy patterns located to reduce dishing'20067,109,126'Method of manufacturing a semiconductor integrated circuit device'20067,009,233'Semiconductor integrated circuit device including dummy patterns located to reduce dishing'20066,603,162'Semiconductor integrated circuit device including dummy patterns located to reduce dishing'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2013Patents assigned to HITACHI ULSI SYS CO LTD (7)· patent assignee history
2003–2016Based in Akishima, JP· patent location history
2006–2010Patents assigned to RENESAS TECH CORP (16)· patent assignee history
2006–2011Based in Hitachinaka, JP· patent location history
2010–2021Patents assigned to RENESAS ELECTRONICS CORP (48)· patent assignee history
2012–2015Patents assigned to CHAKIHARA HIRAKU (14)· patent assignee history
2012–2016Based in Kanagawa, JP· patent location history
2013–2015Patents assigned to ISHII YASUSHI (6)· patent assignee history
2013–2021Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RENESAS ELECTRONICS CORP482010–2021
RENESAS TECH CORP162006–2010
CHAKIHARA HIRAKUself142012–2015
HITACHI ULSI SYS CO LTD72003–2013
ISHII YASUSHI62013–2015
Locations
LocationPatentsSpan
Kanagawa, JP262012–2016
Akishima, JP242003–2016
Tokyo, JP102013–2021
Hitachinaka, JP72006–2011