Inventor
Christopher J. Penny
Inventor
Saratoga Springs, NY, US
Overview
Patents· 108 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1031%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10DInorganic electric semiconductor devices6%
H10NElectric solid-state devices not otherwise provided for2%
G06FElectric digital data processing2%
H10KOrganic electric solid-state devices1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
H01JElectric discharge tubes or discharge lamps1%
H04NPictorial communication, e.g. television1%
PatentTitleYear
11,113,533Smart display apparatus and control system202111,062,943Top via interconnects with wrap around liner202111,056,429Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device202111,018,007Self aligned pattern formation post spacer etchback in tight pitch configurations202111,005,646Blockchain stochastic timer transaction synchronization202111,004,790Method of manufacturing an interconnect without dielectric exclusion zones by thermal decomposition of a sacrificial filler material202110,978,393Hybrid dielectric scheme for varying liner thickness and manganese concentration202110,978,343Interconnect structure having fully aligned vias202110,971,030Remote physical training202110,964,588Selective ILD deposition for fully aligned via with airgap202110,957,583Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs202110,943,866Method and structure to construct cylindrical interconnects to reduce resistance202110,916,154Language learning and speech enhancement through natural language processing202110,833,149Capacitors202010,785,590Binaural audio calibration202010,784,156Self-aligned airgaps with conductive lines and vias202010,784,197Method and structure to construct cylindrical interconnects to reduce resistance202010,770,653Selective dielectric deposition to prevent gouging in MRAM202010,763,166Self-forming barrier for use in air gap formation202010,763,160Semiconductor device with selective insulator for improved capacitance202010,679,934Capacitance reduction in sea of lines BEOL metallization202010,658,154System and method for performing nano beam diffraction analysis202010,651,078Selective ILD deposition for fully aligned via with airgap202010,629,529Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device202010,629,478Dual-damascene formation with dielectric spacer and thin liner202010,629,428Metal insulator metal capacitor devices202010,606,231Computer-mediated reality including physical damping feedback202010,566,414BEOL capacitor through airgap metallization202010,566,231Interconnect formation with chamferless via, and related interconnect202010,546,774Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs202010,545,806Proximity correction in three-dimensional manufacturing202010,546,813BEOL vertical fuse formed over air gap202010,541,206Interconnect structure including air gaps enclosed between conductive lines and a permeable dielectric layer202010,529,569Self aligned pattern formation post spacer etchback in tight pitch configurations202010,529,662Method and structure to construct cylindrical interconnects to reduce resistance202010,528,817Smart display apparatus and control system202010,492,019Binaural audio calibration201910,475,878BEOL capacitor through airgap metallization201910,453,793BEOL vertical fuse formed over air gap201910,395,985Self aligned conductive lines with relaxed overlay201910,388,525Multi-angled deposition and masking for custom spacer trim and selected spacer removal201910,366,952Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device201910,366,940Air gap and air spacer pinch off201910,361,079Multi-angled deposition and masking for custom spacer trim and selected spacer removal201910,361,157Method of manufacturing self-aligned interconnects by deposition of a non-conformal air-gap forming layer having an undulated upper surface201910,361,117Selective ILD deposition for fully aligned via with airgap201910,347,825Selective deposition and nitridization of bottom electrode metal for MRAM applications201910,312,434Selective deposition and nitridization of bottom electrode metal for MRAM applications201910,283,586Capacitors201910,256,171Air gap and air spacer pinch off201910,256,191Hybrid dielectric scheme for varying liner thickness and manganese concentration201910,242,933Air gap and air spacer pinch off201910,229,967High-density MIM capacitors201910,229,851Self-forming barrier for use in air gap formation201910,177,076Air gap and air spacer pinch off201910,170,416Selective blocking boundary placement for circuit locations requiring electromigration short-length201910,170,540Capacitors201910,170,411Airgap protection layer for via alignment201910,121,661Self aligned pattern formation post spacer etchback in tight pitch configurations201810,109,579Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device201810,109,455System and method for performing nano beam diffraction analysis201810,083,905Skip-vias bypassing a metallization level at minimum pitch201810,083,864Self aligned conductive lines with relaxed overlay201810,083,908BEOL vertical fuse formed over air gap201810,056,290Self-aligned pattern formation for a semiconductor device201810,002,762Multi-angled deposition and masking for custom spacer trim and selected spacer removal20189,997,451Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device20189,997,454BEOL vertical fuse formed over air gap20189,991,156Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs20189,978,560System and method for performing nano beam diffraction analysis20189,972,533Aligning conductive vias with trenches20189,966,305Ion flow barrier structure for interconnect metallization20189,966,337Fully aligned via with integrated air gaps20189,960,117Air gap semiconductor structure with selective cap bilayer20189,934,970Self aligned pattern formation post spacer etchback in tight pitch configurations20189,929,088'Airgap protection layer for via alignment'20189,911,647'Self aligned conductive lines'20189,911,651'Skip-vias bypassing a metallization level at minimum pitch'20189,905,513'Selective blocking boundary placement for circuit locations requiring electromigration short-length'20189,899,256'Self-aligned airgaps with conductive lines and vias'20189,899,338'Structure and fabrication method for enhanced mechanical strength crack stop'20189,852,946Self aligned conductive lines20179,837,355Method for maximizing air gap in back end of the line interconnect through via landing modification20179,837,485High-density MIM capacitors20179,837,305Forming deep airgaps without flop over20179,824,982'Structure and fabrication method for enhanced mechanical strength crack stop'20179,793,213'Ion flow barrier structure for interconnect metallization'20179,793,193'Air gap and air spacer pinch off'20179,793,206'Heterogeneous metallization using solid diffusion removal of metal interconnects'20179,786,760'Air gap and air spacer pinch off'20179,786,554'Self aligned conductive lines'20179,779,944'Method and structure for cut material selection'20179,780,027'Hybrid airgap structure with oxide liner'20179,773,700'Aligning conductive vias with trenches'20179,711,455'Method of forming an air gap semiconductor structure with selective cap bilayer'20179,685,366'Forming chamferless vias using thermally decomposable porefiller'20179,666,528'BEOL vertical fuse formed over air gap'20179,666,529'Method and structure to reduce the electric field in semiconductor wiring interconnects'20179,607,943'Capacitors'20179,607,886'Self aligned conductive lines with relaxed overlay'20179,553,019'Airgap protection layer for via alignment'20179,449,871'Hybrid airgap structure with oxide liner'20169,379,057'Method and structure to reduce the electric field in semiconductor wiring interconnects'20169,349,687'Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect'20169,305,836'Air gap semiconductor structure with selective cap bilayer'20169,105,641'Profile control in interconnect structures'20158,835,305'Method of fabricating a profile control in interconnect structures'20147,544,609'Method for integrating liner formation in back end of line processing'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2021Patents assigned to IBM (100)· patent assignee history
2009–2017Based in Poughkeepsie, NY, US· patent location history
2014–2016Patents assigned to PENNY CHRISTOPHER J (2)· patent assignee history
2014Patents assigned to CHEN SHYNG-TSONG (1)· patent assignee history
2016–2021Based in Saratoga Springs, NY, US· patent location history
2018–2020Based in Albany, NY, US· patent location history
2020–2021Patents assigned to TESSERA INC (6)· patent assignee history
2020Patents assigned to GLOBALFOUNDRIES INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 100 | 2009–2021 |
| TESSERA INC | 6 | 2020–2021 |
| GLOBALFOUNDRIES INC | 2 | 2020 |
| PENNY CHRISTOPHER Jself | 2 | 2014–2016 |
| CHEN SHYNG-TSONG | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saratoga Springs, New York, US | 99 | 2016–2021 |
| Poughkeepsie, New York, US | 6 | 2009–2017 |
| Albany, New York, US | 3 | 2018–2020 |