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Inventor

Fuwan Gan

Inventor
Cambridge, MA, US

Overview

3→
Patents
2008–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation40%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein20%
H10DInorganic electric semiconductor devices20%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution20%
PatentTitleYear
8,257,997'Semiconductor photodetectors'20127,880,204'System and method for providing a high frequency response silicon photodetector'20117,369,714'High-speed electronic carrier-injection modulator based on high-index-contrast Si-waveguide'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2011Patents assigned to MASSACHUSETTS INST TECHNOLOGY (2)· patent assignee history
2008–2011Based in Cambridge, MA, US· patent location history
2012Patents assigned to CHEN LIANG (1)· patent assignee history
2012Patents assigned to GAN FUWAN (1)· patent assignee history
2012Patents assigned to HONG CHINGYIN (1)· patent assignee history
2012Patents assigned to PAN DONG (1)· patent assignee history
2012Based in Woburn, MA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MASSACHUSETTS INST TECHNOLOGY22008–2011
CHEN LIANG12012
GAN FUWANself12012
HONG CHINGYIN12012
PAN DONG12012
Locations
LocationPatentsSpan
Cambridge, Massachusetts, US22008–2011
Woburn, Massachusetts, US12012