LexDanaLexDanabeta
Inventor

Jonathan K. Abrokwah

Inventor
Tempe, AZ, US

Overview

49→
Patents
1985–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H01LSemiconductor devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C23CCoating metallic material4%
C30BSingle-crystal growth3%
H01FMagnets2%
H03HImpedance networks, e.g. resonant circuits2%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,332,805Semiconductor structure with strain reduction20199,576,920'Moisture barrier for semiconductor structures with stress relief'20179,508,661'Moisture barrier for semiconductor structures with stress relief'20168,941,218'Passivation for group III-V semiconductor devices having a plated metal layer over an interlayer dielectric layer'20158,901,606'Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer'20148,853,743'Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer'20148,847,280'Insulated gate field effect transistors'20148,105,925'Method for forming an insulated gate field effect device'20127,961,063'Balun signal transformer and method of forming'20117,935,607'Integrated passive device with a high resistivity substrate and method for forming the same'20117,842,587'III-V MOSFET fabrication and device'20107,683,733'Balun transformer with improved harmonic suppression'20107,305,223'Radio frequency circuit with integrated on-chip radio frequency signal coupler'20076,855,965'Method of manufacturing a semiconductor component and semiconductor component thereof'20056,803,248'Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers'20046,465,297'Method of manufacturing a semiconductor component having a capacitor'20026,368,929'Method of manufacturing a semiconductor component and semiconductor component thereof'20026,359,294'Insulator-compound semiconductor interface structure'20026,159,834'Method of forming a gate quality oxide-compound semiconductor structure'20006,113,690'Method of preparing crystalline alkaline earth metal oxides on a Si substrate'20006,110,840'Method of passivating the surface of a Si substrate'20006,094,295'Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication'20006,030,453'III-V epitaxial wafer production'20006,025,281'Passivation of oxide-compound semiconductor interfaces'20006,022,410'Alkaline-earth metal silicides on silicon'20005,945,718'Self-aligned metal-oxide-compound semiconductor device and method of fabrication'19995,937,285'Method of fabricating submicron FETs with low temperature group III-V material'19995,907,792'Method of forming a silicon nitride layer'19995,904,553'Fabrication method for a gate quality oxide-compound semiconductor structure'19995,902,130'Thermal processing of oxide-compound semiconductor structures'19995,895,929'Low subthreshold leakage current HFET'19995,739,557'Refractory gate heterostructure field effect transistor'19985,693,544'N-type higfet and method'19975,614,739'HIGFET and method'19975,606,184'Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making'19975,597,768'Method of forming a Ga.sub.2 O.sub.3 dielectric layer'19975,539,248'Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF)'19965,514,891'N-type HIGFET and method'19965,512,518'Method of manufacture of multilayer dielectric on a III-V substrate'19965,480,829'Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts'19965,478,437'Selective processing using a hydrocarbon and hydrogen'19955,444,016'Method of making ohmic contacts to a complementary III-V semiconductor device'19955,243,206'Logic circuit using vertically stacked heterojunction field effect transistors'19935,142,349'Self-doped high performance complementary heterojunction field effect transistor'19925,116,774'Heterojunction method and structure'19925,060,031'Complementary heterojunction field effect transistor with an anisotype N+ g a -channel devices'19914,814,851'High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor'19894,729,000'Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates'19884,550,031'Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–1989Patents assigned to HONEYWELL INC (3)· patent assignee history
1985–1989Based in Rosemount, MN, US· patent location history
1991–2002Patents assigned to MOTOROLA INC (30)· patent assignee history
1991–2002Based in Tempe, AZ, US· patent location history
2002–2014Based in Chandler, AZ, US· patent location history
2004–2014Patents assigned to FREESCALE SEMICONDUCTOR INC (9)· patent assignee history
2004Based in Scottsdale, AZ, US· patent location history
2012–2014Patents assigned to ABROKWAH JONATHAN K (2)· patent assignee history
2014–2019Patents assigned to AVAGO TECHNOLOGIES GENERAL IP (6)· patent assignee history
2014–2019Based in Fort Collins, CO, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MOTOROLA INC301991–2002
FREESCALE SEMICONDUCTOR INC92004–2014
AVAGO TECHNOLOGIES GENERAL IP62014–2019
HONEYWELL INC31985–1989
ABROKWAH JONATHAN Kself22012–2014
Locations
LocationPatentsSpan
Tempe, AZ, US291991–2002
Chandler, AZ, US102002–2014
Fort Collins, CO, US62014–2019
Rosemount, Minnesota, US31985–1989
Scottsdale, AZ, US12004