LexDanaLexDanabeta
Inventor

Yoshinobu Asami

Inventor
Kanagawa, JP

Overview

56→
Patents
2008–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices23%
H10BElectronic memory devices16%
G11CStatic stores13%
H01LSemiconductor devices10%
H10KOrganic electric solid-state devices8%
B82YSpecific uses or applications of nanostructures7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
10,693,012Semiconductor device and method for manufacturing the same202010,490,116Semiconductor device, memory device, and display system201910,199,508Semiconductor device and method for manufacturing the same201910,186,614Semiconductor device and manufacturing method thereof201910,096,718Transistor, electronic device, manufacturing method of transistor20189,954,113Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor20189,954,112Semiconductor device and manufacturing method thereof20189,905,700'Semiconductor device or memory device and driving method thereof'20189,887,010'Semiconductor device, memory device, and driving method thereof'20189,786,669'Memory device and manufacturing method the same'20179,768,318'Semiconductor device and method for manufacturing the same'20179,263,404'Managing method of building material and wireless chip applied to the method'20169,231,070'Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film'20169,159,793'P-type semiconductor material and semiconductor device'20159,129,866'Memory device and manufacturing method the same'20159,112,086'Photoelectric conversion device'20159,048,356'Photoelectric conversion device'20158,994,009'Photoelectric conversion device'20158,889,490'Memory device and manufacturing method thereof'20148,872,251'Nonvolatile semiconductor memory device and manufacturing method thereof'20148,865,511'Semiconductor device and method for manufacturing the same'20148,804,404'Memory device and manufacturing method the same'20148,785,766'Photoelectric conversion device and energy conversion layer for photoelectric conversion device'20148,772,770'P-type semiconductor material and semiconductor device'20148,729,620'Nonvolatile semiconductor memory device'20148,698,220'Semiconductor device having concentration difference of impurity element in semiconductor films'20148,649,895'Managing method of building material and wireless chip applied to the method'20148,629,490'Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode'20148,604,547'Memory element and semiconductor device'20138,526,216'Memory device and manufacturing method the same'20138,399,881'Memory element, memory device, and semiconductor device'20138,295,104'Semiconductor device'20128,288,197'Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layer'20128,252,643'Semiconductor device and manufacturing method thereof'20128,238,152'Memory device and manufacturing method the same'20128,227,863'Nonvolatile semiconductor memory device'20128,212,302'Nonvolatile semiconductor memory device'20128,198,666'Semiconductor device including a nonvolatile memory element having first, second and third insulating films'20128,193,574'Non-volatile semiconductor memory device'20128,188,535'Nonvolatile semiconductor memory device and manufacturing method thereof'20128,101,943'Semiconductor device'20128,030,643'Memory device and manufacturing method the same'20118,022,460'Nonvolatile semiconductor memory device'20117,994,000'Semiconductor device and method of manufacturing the same'20117,968,932'Semiconductor device and manufacturing method thereof'20117,955,995'Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film'20117,956,352'Memory element comprising an organic compound and an insulator'20117,842,992'Nonvolatile semiconductor memory device having floating gate that includes two layers'20107,786,526'Nonvolatile semiconductor memory device'20107,768,014'Memory device and manufacturing method thereof'20107,745,252'Semiconductor device and manufacturing method thereof'20107,745,827'Memory device'20107,692,232'Nonvolatile semiconductor memory device'20107,688,624'Semiconductor device'20107,611,965'Semiconductor device and manufacturing method thereof'20097,358,590'Semiconductor device and driving method thereof'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2020Patents assigned to SEMICONDUCTOR ENERGY LAB (56)· patent assignee history
2008–2017Based in Atsugi, JP· patent location history
2009–2020Based in Kanagawa, JP· patent location history
2012–2016Patents assigned to ASAMI YOSHINOBU (24)· patent assignee history
2012–2014Patents assigned to TAKANO TAMAE (7)· patent assignee history
2012–2014Patents assigned to YAMAZAKI SHUNPEI (7)· patent assignee history
2012–2014Patents assigned to YUKAWA MIKIO (6)· patent assignee history
2018–2019Based in Isehara, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR ENERGY LAB562008–2020
ASAMI YOSHINOBUself242012–2016
TAKANO TAMAE72012–2014
YAMAZAKI SHUNPEI72012–2014
YUKAWA MIKIO62012–2014
Locations
LocationPatentsSpan
Kanagawa, JP292009–2020
Atsugi, JP252008–2017
Isehara, JP22018–2019