Inventor
Weihua Cheng
Inventor
Wuhan, CN
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1029%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10BElectronic memory devices14%
PatentTitleYear
10,818,631Semiconductor structure and method of forming the same202010,811,380Semiconductor structure and forming method thereof202010,790,297Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer202010,593,690Hybrid bonding contact structure of three-dimensional memory device20209,589,937'Semiconductor cooling method and method of heat dissipation'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017Patents assigned to WUHAN XINXIN SEMICONDUCTOR MFG (1)· patent assignee history
2017–2020Based in Hubei, CN· patent location history
2020Patents assigned to YANGTZE MEMORY TECH CO LTD (4)· patent assignee history
2020Based in Wuhan, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 4 | 2020 |
| WUHAN XINXIN SEMICONDUCTOR MFG | 1 | 2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wuhan, CN | 3 | 2020 |
| Hubei, CN | 2 | 2017–2020 |