Inventor

Chun-sheng LIANG

Inventor
TW

Overview

43→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
B82YSpecific uses or applications of nanostructures3%
H10BElectronic memory devices2%
PatentTitleYear
12,581,703Multilayer gate isolation structure202612,575,146Semiconductor structure, semiconductor assembly and method for manufacturing the same202612,563,798Semiconductor device having nanosheet transistor and methods of fabrication thereof202612,538,533Semiconductor device structure and method for forming the same202612,520,574Semiconductor device structure including forksheet transistors and methods of forming the same202612,507,450—202512,490,505Gate dielectric having a non-uniform thickness profile202512,446,271Semiconductor device structure and methods of forming the same202512,408,425Semiconductor structure with high integration density and method for manufacturing the same202512,376,326Gate resistance improvement and method thereof202512,362,229Semiconductor device structures202512,324,235Semiconductor device and method of forming the same202512,310,068Semiconductor device and manufacturing method thereof202512,288,723Semiconductor device and manufacturing method thereof202512,199,164Semiconductor device and manufacturing method thereof202512,183,810Semiconductor devices and methods of manufacture202412,170,320Semiconductor device and method of manufacture202412,166,034Semiconductor device with CPODE and related methods202412,087,844Semiconductor device structure with uniform threshold voltage distribution and method of forming the same202412,040,237Semiconductor device structure with spacer202412,027,415Semiconductor device structures202412,015,077Metal gate using monolayers202411,923,455Semiconductor device and method of forming the same202411,923,194Epitaxial blocking layer for multi-gate devices and fabrication methods thereof202411,848,373Semiconductor devices and methods of manufacture202311,837,602Semiconductor device structure having a plurality of threshold voltages and method of forming the same202311,810,978Gate resistance improvement and method thereof202311,799,017Semiconductor device structure with uniform threshold voltage distribution and method of forming the same202311,756,962Semiconductor device202311,735,662Semiconductor device and manufacturing method thereof202311,670,695Semiconductor device and method of manufacture202311,670,697Semiconductor device and manufacturing method thereof202311,521,971Gate dielectric having a non-uniform thickness profile202211,476,156Semiconductor device structures202211,404,418Semiconductor device and manufacturing method thereof202211,374,006Semiconductor device and method of forming the same202211,348,841Semiconductor device structure with recessed spacer202211,315,785Epitaxial blocking layer for multi-gate devices and fabrication methods thereof202211,282,705Semiconductor device and method of forming the same202211,282,942Semiconductor device structure with uniform threshold voltage distribution and method of forming the same202211,264,380Semiconductor device and method of manufacturing the same202211,257,924Metal gate using monolayers202211,145,730Semiconductor device and method for manufacturing the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (43)· patent assignee history
2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD432021–2026
Locations
LocationPatentsSpan
TW432021–2026