Inventor
Troy L. Graves-Abe
Inventor
Wappingers Falls, NY, US
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1030%
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
Y10TTechnical subjects covered by former us classification8%
H10DInorganic electric semiconductor devices7%
G06FElectric digital data processing5%
H05KPrinted circuits5%
B82YSpecific uses or applications of nanostructures2%
G01RMeasuring electric variables2%
H10KOrganic electric solid-state devices2%
PatentTitleYear
10,613,754Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration202010,503,402Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration201910,296,698Forming multi-sized through-silicon-via (TSV) structures201910,170,337Implant after through-silicon via (TSV) etch to getter mobile ions20199,886,193'Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration'20189,640,514'Wafer bonding using boron and nitrogen based bonding stack'20179,476,927'Structure and method to determine through silicon via build integrity'20169,263,324'3-D integration using multi stage vias'20169,257,336'Bottom-up plating of through-substrate vias'20169,252,133'Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures'20169,214,435'Via structure for three-dimensional circuit integration'20159,060,457'Sidewalls of electroplated copper interconnects'20159,055,703'Sidewalls of electroplated copper interconnects'20159,040,407'Sidewalls of electroplated copper interconnects'20158,975,910'Through-silicon-via with sacrificial dielectric line'20158,956,973'Bottom-up plating of through-substrate vias'20158,951,906'Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via'20158,927,427'Anticipatory implant for TSV'20158,907,494'Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures'20148,889,542'Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via'20148,853,857'3-D integration using multi stage vias'20148,791,009'Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via'20148,791,005'Sidewalls of electroplated copper interconnects'20148,691,691'TSV pillar as an interconnecting structure'20148,546,961'Alignment marks to enable 3D integration'20138,476,168'Non-conformal hardmask deposition for through silicon etch'20138,138,041'In-situ silicon cap for metal gate electrode'20127,569,416'Forming closely spaced electrodes'20097,119,356'Forming closely spaced electrodes'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2009Based in Princeton, NJ, US· patent location history
2012–2020Patents assigned to IBM (20)· patent assignee history
2012–2020Based in Wappingers Falls, NY, US· patent location history
2013–2015Patents assigned to FAROOQ MUKTA G (8)· patent assignee history
2013–2015Patents assigned to GRAVES-ABE TROY L (8)· patent assignee history
2014–2015Patents assigned to FITZSIMMONS JOHN A (2)· patent assignee history
2014–2016Based in Wappinger Falls, NY, US· patent location history
2015–2019Patents assigned to GLOBALFOUNDRIES INC (7)· patent assignee history
2015Based in Hopewell Junction, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 20 | 2012–2020 |
| FAROOQ MUKTA G | 8 | 2013–2015 |
| GRAVES-ABE TROY Lself | 8 | 2013–2015 |
| GLOBALFOUNDRIES INC | 7 | 2015–2019 |
| FITZSIMMONS JOHN A | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wappingers Falls, New York, US | 24 | 2012–2020 |
| Wappinger Falls, New York, US | 2 | 2014–2016 |
| Princeton, New Jersey, US | 2 | 2006–2009 |
| Hopewell Junction, New York, US | 1 | 2015 |