Inventor
Jens-Peer Stengl
Inventor
Grafrath, DE
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01FMagnets11%
H01LSemiconductor devices7%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems7%
C30BSingle-crystal growth4%
H03HImpedance networks, e.g. resonant circuits4%
H03KPulse technique4%
H04BTransmission4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
PatentTitleYear
9,431,379'Signal transmission arrangement'20168,970,000'Signal transmission arrangement'20158,790,985'High voltage resistance coupling structure'20148,319,573'Signal transmission arrangement'20128,278,730'High voltage resistance coupling structure'20127,710,215'Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configuration'20106,870,201'High voltage resistant edge structure for semiconductor components'20056,831,327'Vertically structured power semiconductor component'20046,812,524'Field effect controlled semiconductor component'20046,465,863'Power diode structure'20026,309,974'Method for eliminating residual oxygen impurities from silicon wafers pulled from a crucible'20016,271,562'Semiconductor component which can be controlled by a field effect'20016,037,631'Semiconductor component with a high-voltage endurance edge structure'20005,726,478'Integrated power semiconductor component having a substrate with a protective structure in the substrate'19985,311,052'Planar semiconductor component with stepped channel stopper electrode'19944,561,003'Field effect transistor'19854,502,070'FET Controlled thyristor'19854,497,109'Method of fabricating light-controlled thyristor utilizing selective etching and ion-implantation'19854,459,498'Switch with series-connected MOS-FETs'1984Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1984–2000Patents assigned to SIEMENS AG (7)· patent assignee history
1984–1994Based in Munich, DE· patent location history
1998–2016Based in Grafrath, DE· patent location history
2001–2005Patents assigned to INFINEON TECHNOLOGIES AG (6)· patent assignee history
2010–2015Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (5)· patent assignee history
2012–2015Patents assigned to STENGL JENS-PEER (4)· patent assignee history
2012–2015Patents assigned to WAHL UWE (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SIEMENS AG | 7 | 1984–2000 |
| INFINEON TECHNOLOGIES AG | 6 | 2001–2005 |
| INFINEON TECHNOLOGIES AUSTRIA | 5 | 2010–2015 |
| STENGL JENS-PEERself | 4 | 2012–2015 |
| WAHL UWE | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Grafrath, DE | 14 | 1998–2016 |
| Munich, DE | 5 | 1984–1994 |