Inventor

Jinn-Kwei Liang

Inventor

Yongkang City, TW

Overview

3→

Patents

2015–2016

Patent span

Electricity

Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices30%

H10DInorganic electric semiconductor devices20%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%

Y02PClimate change mitigation technologies in the production or processing of goods10%

PatentTitleYear

9,379,275'Apparatus and method for reducing dark current in image sensors'2016 9,263,275'Interface for metal gate integration'2016 9,105,578'Interface for metal gate integration'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history

2015–2016Based in Yongkang City, TW· patent location history

2016Patents assigned to HSIEH WEN-CHIEH (1)· patent assignee history

2016Patents assigned to JANGJIAN SHIU-KO (1)· patent assignee history

2016Patents assigned to KO HSIANG HSIANG (1)· patent assignee history

2016Patents assigned to LIANG JINN-KWEI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG	3	2015–2016
HSIEH WEN-CHIEH	1	2016
JANGJIAN SHIU-KO	1	2016
KO HSIANG HSIANG	1	2016
LIANG JINN-KWEIself	1	2016

Locations

Location	Patents	Span
Yongkang City, TW	3	2015–2016