Inventor
Kunimasa Takahashi
Inventor
Osaka, JP
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C30BSingle-crystal growth4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C07CAcyclic or carbocyclic compounds3%
C10CWorking-up pitch, asphalt, bitumen, tar3%
H01LSemiconductor devices3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
H03DDemodulation or transference of modulation from one carrier to another2%
PatentTitleYear
9,147,804'Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element'20159,018,699'Silicon carbide semiconductor element and method for fabricating the same'20158,866,127'Nitride semiconductor light-emitting element including Si-doped layer, and light source'20148,748,901'Silicon carbide semiconductor element'20148,686,439'Silicon carbide semiconductor element'20148,476,733'Semiconductor element and manufacturing method therefor'20138,399,962'Semiconductor chip and process for production thereof'20137,846,828'Semiconductor device and method for fabricating the same'20107,816,688'Semiconductor device and production method therefor'20107,786,565'Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor'20107,772,098'Method for manufacturing semiconductor device'20107,718,519'Method for manufacturing silicon carbide semiconductor element'20107,709,403'Silicon carbide-oxide layered structure, production method thereof, and semiconductor device'20107,671,409'Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence'20107,507,999'Semiconductor device and method for manufacturing same'20097,473,929'Semiconductor device and method for fabricating the same'20097,462,540'Silicon carbide semiconductor device and process for producing the same'20087,436,031'Device for implementing an inverter having a reduced size'20087,381,993'High-breakdown-voltage insulated gate semiconductor device'20087,230,273'Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor'20077,217,954'Silicon carbide semiconductor device and method for fabricating the same'20077,214,984'High-breakdown-voltage insulated gate semiconductor device'20076,995,396'Semiconductor substrate, semiconductor device and method for fabricating the same'20066,995,397'Semiconductor device'20066,989,553'Semiconductor device having an active region of alternating layers'20066,940,127'Equipment for communication system and semiconductor integrated circuit device'20056,940,110'SiC-MISFET and method for fabricating the same'20056,900,483'Semiconductor device and method for manufacturing the same'20056,864,507'MISFET'20056,690,035'Semiconductor device having an active region of alternating layers'20046,674,131'Semiconductor power device for high-temperature applications'20046,654,604'Equipment for communication system'20036,617,653'MISFET'20036,600,203'Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe'20036,580,125'Semiconductor device and method for fabricating the same'20036,504,176'Field effect transistor and method of manufacturing the same'20036,306,211'Method for growing semiconductor film and method for fabricating semiconductor device'20016,270,573'Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate'20016,228,720'Method for making insulated-gate semiconductor element'20014,985,184'Production of carbonaceous powders and their granulation'19914,929,404'Graphitic or carbonaceous moldings and processes for producing the same'19904,596,652'Process for producing mesophase pitch'19864,528,087'Process for producing mesophase pitch'19854,341,912'Process for producing alkenyl-substituted aromatic compounds and catalyst therefor'19824,263,457'Process for producing biphenyl derivatives'19814,239,928'Process for preparing alkyl-substituted aromatic compounds'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1980–1991Patents assigned to MITSUBISHI PETROCHEMICAL CO (7)· patent assignee history
1980–1985Based in Ami, JP· patent location history
1986–2009Based in Ibaraki, JP· patent location history
2001–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (22)· patent assignee history
2001–2015Based in Osaka, JP· patent location history
2008–2015Patents assigned to PANASONIC CORP (16)· patent assignee history
2010Based in Hyogo, JP· patent location history
2010Based in Iabaraki, JP· patent location history
2013–2015Patents assigned to TAKAHASHI KUNIMASA (4)· patent assignee history
2013–2014Patents assigned to KUDOU CHIAKI (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 22 | 2001–2008 |
| PANASONIC CORP | 16 | 2008–2015 |
| MITSUBISHI PETROCHEMICAL CO | 7 | 1980–1991 |
| TAKAHASHI KUNIMASAself | 4 | 2013–2015 |
| KUDOU CHIAKI | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Osaka, JP | 29 | 2001–2015 |
| Ibaraki, JP | 7 | 1986–2009 |
| Ami, JP | 3 | 1980–1985 |
| Hyogo, JP | 2 | 2010 |
| Iabaraki, JP | 1 | 2010 |