Inventor

Manabu Yanagihara

Inventor

Osaka, JP

Overview

1990–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices51%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H01LSemiconductor devices10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

H03KPulse technique6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

G05FSystems for regulating electric or magnetic variables2%

H03FAmplifiers2%

G01RMeasuring electric variables1%

G06FElectric digital data processing1%

PatentTitleYear

11,031,935Switching circuit2021 10,475,802Semiconductor device2019 10,312,339Semiconductor device2019 10,090,220Semiconductor device2018 10,083,870Semiconductor device2018 9,923,069'Nitride semiconductor device'2018 9,905,563'Semiconductor device'2018 9,818,835'Semiconductor device'2017 9,761,670'Semiconductor device composed of AlGaInN layers with inactive regions'2017 9,680,053'Nitride semiconductor device'2017 RE045989'Semiconductor device and method for driving the same'2016 8,779,438'Field-effect transistor with nitride semiconductor and method for fabricating the same'2014 8,745,569'Equivalent circuit of bidirectional switch, simulation method for bidirectional switch, and simulation device for bidirectional switch'2014 8,710,548'Semiconductor device and method for manufacturing the same'2014 8,598,628'Semiconductor device'2013 8,592,866'Transistor'2013 8,593,068'Two-wire AC switch'2013 8,569,843'Semiconductor device'2013 8,526,207'Bi-directional switch, alternating-current two-wire switch, switching power source circuit, and method of driving bi-directional switch'2013 8,497,553'Semiconductor device'2013 8,497,581'Semiconductor device and manufacturing method thereof'2013 8,405,126'Semiconductor device'2013 8,384,212'Semiconductor equipment and method of manufacturing the same'2013 8,344,463'Bidirectional switch'2013 8,264,002'Field-effect transistor'2012 8,203,376'Semiconductor device and method for driving the same'2012 8,164,115'Nitride semiconductor device'2012 8,148,752'Field effect transistor'2012 8,076,698'Transistor and method for operating the same'2011 7,898,002'Nitride semiconductor device and method for fabricating the same'2011 7,825,434'Nitride semiconductor device'2010 7,821,030'Semiconductor device and method for manufacturing the same'2010 7,816,707'Field-effect transistor with nitride semiconductor and method for fabricating the same'2010 7,759,700'Semiconductor device'2010 7,612,426'Schottky barrier diode and diode array'2009 7,605,441'Semiconductor device'2009 7,595,680'Bidirectional switch and method for driving the same'2009 7,576,373'Nitride semiconductor device and method for manufacturing the same'2009 7,550,821'Nitride semiconductor device'2009 7,528,423'Semiconductor device'2009 7,436,237'Distortion reducing semiconductor switch'2008 7,375,407'Schottky barrier diode and integrated circuit using the same'2008 7,368,793'HEMT transistor semiconductor device'2008 7,332,754'Semiconductor switch'2008 7,291,872'Semiconductor device and method for fabricating the same'2007 7,217,960'Semiconductor device'2007 7,148,557'Bipolar transistor and method for fabricating the same'2006 7,132,703'Field-effect transistor'2006 6,852,580'Method of fabricating semiconductor device'2005 6,797,996'Compound semiconductor device and method for fabricating the same'2004 6,677,625'Bipolar transistor'2004 6,407,617'Bias circuit and method of fabricating semiconductor device'2002 6,376,898'Bipolar transistor layout with minimized area and improved heat dissipation'2002 6,153,499'Method of manufacturing semiconductor device'2000 6,051,454'Semiconductor device and method for fabricating the same'2000 5,523,623'Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode'1996 5,166,081'Method of producing a bipolar transistor'1992 5,147,775'Method of fabricating a high-frequency bipolar transistor'1992 4,965,650'Bipolar transistor and method of producing the same'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (18)· patent assignee history

1990–1992Based in Kadoma, JP· patent location history

1992–2021Based in Osaka, JP· patent location history

1996–2009Based in Toyonaka, JP· patent location history

2009–2017Patents assigned to PANASONIC CORP (31)· patent assignee history

2011–2014Patents assigned to YANAGIHARA MANABU (16)· patent assignee history

2011–2014Patents assigned to UEMOTO YASUHIRO (11)· patent assignee history

2017–2021Patents assigned to PANASONIC IP MAN CO LTD (10)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
PANASONIC CORP	31	2009–2017
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD	18	1990–2008
YANAGIHARA MANABUself	16	2011–2014
UEMOTO YASUHIRO	11	2011–2014
PANASONIC IP MAN CO LTD	10	2017–2021

Locations

Location	Patents	Span
Osaka, JP	50	1992–2021
Toyonaka, JP	7	1996–2009
Kadoma, JP	2	1990–1992