Inventor

Jingyu Lin

Inventor
Manhattan, KS, US

Overview

19→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers19%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
H05BElectric heating8%
B82YSpecific uses or applications of nanostructures5%
H01LSemiconductor devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
F21KNon-electric light sources using luminescence3%
G02BOptical elements, systems or apparatus3%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%
PatentTitleYear
11,055,708Resource deduction method and apparatus, intelligent terminal, and deduction server202111,037,876Power network and method for routing power network202110,714,651Solid-state neutron detector20209,093,581'Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures'20159,047,818'CMOS IC for micro-emitter based microdisplay'20158,272,757'Light emitting diode lamp capable of high AC/DC voltage operation'20128,227,328'Er doped III-nitride materials and devices synthesized by MOCVD'20128,058,663'Micro-emitter array based full-color micro-display'20117,714,348'AC/DC light emitting diodes with integrated protection mechanism'20107,535,028'Micro-LED based high voltage AC/DC indicator lamp'20097,498,645'Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors'20097,221,044'Heterogeneous integrated high voltage DC/AC light emitter'20077,213,942'Light emitting diodes for high AC voltage operation and general lighting'20077,210,819'Light emitting diodes for high AC voltage operation and general lighting'20077,193,784'Nitride microlens'20076,957,899'Light emitting diodes for high AC voltage operation and general lighting'20056,410,940'Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications'20025,101,109'Persistent photoconductivity quenching effect crystals and electrical apparatus using same'19925,072,122'Charge storage image device using persistent photoconductivity crystals'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2007Patents assigned to UNIV KANSAS STATE (4)· patent assignee history
1991–2012Based in Manhattan, KS, US· patent location history
2005–2015Patents assigned to JIANG HONGXING (6)· patent assignee history
2005–2015Patents assigned to LIN JINGYU (6)· patent assignee history
2007–2012Patents assigned to AC LED LIGHTING L L C (5)· patent assignee history
2011–2015Patents assigned to FAN ZHAOYANG (3)· patent assignee history
2011–2020Based in Lubbock, TX, US· patent location history
2021Based in Shenzhen, CN· patent location history
2021Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
JIANG HONGXING62005–2015
LIN JINGYUself62005–2015
AC LED LIGHTING L L C52007–2012
UNIV KANSAS STATE41991–2007
FAN ZHAOYANG32011–2015
Locations
LocationPatentsSpan
Manhattan, KS, US131991–2012
Lubbock, Texas, US42011–2020
Shenzhen, CN12021
Shanghai, CN12021