Inventor
Kiyofumi Sakaguchi
Inventor
Yokohama, JP
Overview
Patents· 132 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
Y10TTechnical subjects covered by former us classification7%
H10DInorganic electric semiconductor devices5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
Y02PClimate change mitigation technologies in the production or processing of goods2%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
PatentTitleYear
9,723,232'Solid-state image sensor'20179,672,771'Light-emitting device and image forming apparatus'20179,547,252'Organic light emitting device'20179,024,302'Display device'20158,944,616'Display device and image-information processing apparatus equipped with the same'20158,871,640'Method of manufacturing semiconductor chip'20148,717,507'Method of manufacturing a display apparatus by bonding together a pair of substrates with a first sealing member, on the outer periphery of which is arranged an alkylsiloxane compound irradiated with ultraviolet radiation'20148,647,923'Method of manufacturing semiconductor device'20148,617,922'Method of manufacturing semiconductor device'20138,581,271'Display apparatus using separate organic electroluminescent elements in a single pixel'20138,531,842'Display module'20138,497,498'Display device'20138,362,697'Display apparatus'20138,344,603'Organic electroluminescence display apparatus'20137,929,191'Spatial light modulator and light sensing device provided on the same substrate'20117,924,680'Optical information recording and reproducing apparatus and optical information recording apparatus'20117,894,004'Liquid crystal display apparatus, manufacturing method thereof, and liquid crystal projector'20117,864,272'Substrate for a reflection type liquid crystal display apparatus, reflection type liquid crystal display apparatus using the same, and liquid crystal projector apparatus using the same'20117,750,367'Semiconductor member, manufacturing method thereof, and semiconductor device'20107,639,587'Optical information recording and reproducing apparatus and optical information recording apparatus'20097,579,257'Sample separating apparatus and method, and substrate manufacturing method'20097,238,973'Semiconductor member, manufacturing method thereof, and semiconductor device'20077,164,183'Semiconductor substrate, semiconductor device, and method of manufacturing the same'20077,148,119'Process for production of semiconductor substrate'20067,049,624'Member and member manufacturing method'20067,029,950'Thin-film semiconductor device and method of manufacturing the same'20067,017,830'Method and apparatus for separating sample'20066,979,629'Method and apparatus for processing composite member'20056,972,215'Thin-film semiconductor device and method of manufacturing the same'20056,971,432'Sample processing system'20056,953,948'Semiconductor substrate and process for its production'20056,951,796'Substrate and manufacturing method therefor'20056,946,046'Method and apparatus for separating member'20056,946,052'Separating apparatus and processing method for plate member'20056,946,354'Substrate and manufacturing method therefor'20056,900,114'Separating apparatus, separating method, and method of manufacturing semiconductor substrate'20056,891,578'Method of manufacturing a thin-film semiconductor device used for a display region and peripheral circuit region'20056,867,110'Separating apparatus and processing method for plate member'20056,860,963'Sample separating apparatus and method, and substrate manufacturing method'20056,852,187'Method and apparatus for separating member'20056,833,312'Plate member separating apparatus and method'20046,825,099'Method and apparatus for separating member'20046,818,104'Anodizing apparatus'20046,800,871'Display device and process of producing the same'20046,773,534'Sample processing apparatus and method'20046,767,840'Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method'20046,756,289'Method of producing semiconductor member and method of producing solar cell'20046,746,559'Method and apparatus for separating composite member using fluid'20046,712,288'Method and apparatus for separating sample'20046,677,183'Method of separation of semiconductor device'20046,672,358'Sample processing system'20046,664,169'Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus'20036,656,271'Method of manufacturing semiconductor wafer method of using and utilizing the same'20036,653,205'Composite member separating method, thin film manufacturing method, and composite member separating apparatus'20036,653,206'Method and apparatus for processing composite member'20036,629,539'Sample processing system'20036,624,047'Substrate and method of manufacturing the same'20036,613,678'Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure'20036,609,446'Separating apparatus, separating method, and method of manufacturing semiconductor substrate'20036,609,553'Sample processing apparatus and method'20036,605,518'Method of separating composite member and process for producing thin film'20036,602,767'Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery'20036,597,039'Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof'20036,569,748'Substrate and production method thereof'20036,566,235'Process for producing semiconductor member, and process for producing solar cell'20036,540,861'Member separating apparatus and processing apparatus'20036,534,336'Production method of photoelectric conversion device, and photoelectric conversion device produced by the method'20036,534,382'Process for producing semiconductor article'20036,527,031'Sample separating apparatus and method, and substrate manufacturing method'20036,521,078'Sample separating apparatus and method, and substrate manufacturing method'20036,475,323'Method and apparatus for separating composite member using fluid'20026,468,923'Method of producing semiconductor member'20026,452,091'Method of producing thin-film single-crystal device, solar cell module and method of producing the same'20026,448,155'Production method of semiconductor base material and production method of solar cell'20026,436,226'Object separating apparatus and method, and method of manufacturing semiconductor substrate'20026,427,747'Apparatus and method of separating sample and substrate fabrication method'20026,427,748'Sample processing apparatus and method'20026,428,620'Substrate processing method and apparatus and SOI substrate'20026,429,095'Semiconductor article and method of manufacturing the same'20026,426,270'Substrate processing method and method of manufacturing semiconductor substrate'20026,418,999'Sample separating apparatus and method, and substrate manufacturing method'20026,417,069'Substrate processing method and manufacturing method, and anodizing apparatus'20026,391,743'Method and apparatus for producing photoelectric conversion device'20026,391,067'Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus'20026,382,292'Method and apparatus for separating composite member using fluid'20026,380,099'Porous region removing method and semiconductor substrate manufacturing method'20026,376,332'Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method'20026,350,703'Semiconductor substrate and production method thereof'20026,350,702'Fabrication process of semiconductor substrate'20026,342,433'Composite member its separation method and preparation method of semiconductor substrate by utilization thereof'20026,337,030'Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method'20026,331,208'Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor'20016,313,014'Semiconductor substrate and manufacturing method of semiconductor substrate'20016,306,729'Semiconductor article and method of manufacturing the same'20016,294,478'Fabrication process for a semiconductor substrate'20016,258,698'Process for producing semiconductor substrate'20016,254,794'Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution'20016,246,068'Semiconductor article with porous structure'20016,238,586'Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution'20016,221,738'Substrate and production method thereof'20016,211,038'Semiconductor device, and method for manufacturing the same'20016,199,563'Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method'20016,200,878'SOI substrate processing method'20016,190,937'Method of producing semiconductor member and method of producing solar cell'20016,171,512'Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution'20016,156,624'Method for production of SOI substrate by pasting and SOI substrate'20006,143,628'Semiconductor substrate and method of manufacturing the same'20006,127,281'Porous region removing method and semiconductor substrate manufacturing method'20006,121,117'Process for producing semiconductor substrate by heat treating'20006,121,112'Fabrication method for semiconductor substrate'20006,103,598'Process for producing semiconductor substrate'20006,100,165'Method of manufacturing semiconductor article'20006,100,166'Process for producing semiconductor article'20006,054,363'Method of manufacturing semiconductor article'20005,966,620'Process for producing semiconductor article'19995,868,947'Si substrate and method of processing the same'19995,869,387'Process for producing semiconductor substrate by heating to flatten an unpolished surface'19995,856,229'Process for production of semiconductor substrate'19995,854,123'Method for producing semiconductor substrate'19985,840,616'Method for preparing semiconductor member'19985,827,755'Liquid crystal image display unit and method for fabricating semiconductor optical member'19985,767,020'Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution'19985,763,288'Method for producing semiconductor substrate by wafer bonding'19985,750,000'Semiconductor member, and process for preparing same and semiconductor device formed by use of same'19985,530,266'Liquid crystal image display unit and method for fabricating semiconductor optical member'19965,492,859'Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer'19965,466,631'Method for producing semiconductor articles'19955,458,755'Anodization apparatus with supporting device for substrate to be treated'19955,439,843'Method for preparing a semiconductor substrate using porous silicon'19955,374,581'Method for preparing semiconductor member'19945,277,748'Semiconductor device substrate and process for preparing the same'19945,258,322'Method of producing semiconductor substrate'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2017Patents assigned to CANON KK (129)· patent assignee history
1993–2001Based in Atsugi, JP· patent location history
1998–2010Based in Yokohama, JP· patent location history
2003–2011Based in Kanagawa, JP· patent location history
2011–2017Based in Miura-gun, JP· patent location history
2013–2015Patents assigned to SAKAGUCHI KIYOFUMI (9)· patent assignee history
2013Patents assigned to NAGAYAMA KOHEI (2)· patent assignee history
2013–2015Based in Mobara, JP· patent location history
2014Patents assigned to KAWASE NOBUO (2)· patent assignee history
2014Patents assigned to NAKAGAWA KENJI (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 129 | 1993–2017 |
| SAKAGUCHI KIYOFUMIself | 9 | 2013–2015 |
| KAWASE NOBUO | 2 | 2014 |
| NAGAYAMA KOHEI | 2 | 2013 |
| NAKAGAWA KENJI | 2 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 68 | 1998–2010 |
| Kanagawa, JP | 25 | 2003–2011 |
| Atsugi, JP | 18 | 1993–2001 |
| Mobara, JP | 9 | 2013–2015 |
| Miura-gun, JP | 8 | 2011–2017 |