Inventor
Toshio Kamiya
Inventor
Yokohama, JP
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01LSemiconductor devices9%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
C23CCoating metallic material6%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds5%
C04BLime, magnesia5%
C01GCompounds containing metals not covered by subclasses c01d or c01f4%
H10KOrganic electric solid-state devices4%
B64GCosmonautics2%
PatentTitleYear
11,075,303Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body202110,615,287Amorphous oxide and field effect transistor202010,032,930Amorphous oxide and thin film transistor201810,032,931Switching element20189,947,803Amorphous oxide and thin film transistor20189,583,637'Amorphous oxide and field effect transistor'20179,269,826'Amorphous oxide and thin film transistor'20169,130,049'Amorphous oxide and field effect transistor'20158,435,473'Superconducting compound and method for producing the same'20138,420,236'Magnetic semiconductor material'20138,288,321'Layered compound, superconductor and method for producing same'20128,237,166'Display'20128,212,252'Light-emitting device'20128,203,146'Integrated circuits utilizing amorphous oxides'20128,186,627'Attitude control data creating method, and attitude control system applying the method'20128,168,974'Field effect transistor'20128,084,743'Sensor and image pickup device'20118,038,101'Attitude change control method, attitude change control system, attitude change control program and program recording medium'20117,892,458'Metallic electroconductive 12CaO 7Al2O3 compound and process for producing the same'20117,872,259'Light-emitting device'20117,868,326'Field effect transistor'20117,863,611'Integrated circuits utilizing amorphous oxides'20117,829,444'Field effect transistor manufacturing method'20107,791,072'Display'20107,663,116'Sensor and image pickup device'20107,601,984'Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator'20097,535,010'Sensor and image pickup device'20097,453,065'Sensor and image pickup device'20087,061,014'Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2020Patents assigned to JAPAN SCIENCE & TECH AGENCY (12)· patent assignee history
2006–2020Based in Kanagawa, JP· patent location history
2008–2021Patents assigned to TOKYO INST TECH (22)· patent assignee history
2008–2020Patents assigned to CANON KK (21)· patent assignee history
2008–2012Based in Yokohama, JP· patent location history
2011–2018Patents assigned to KAMIYA TOSHIO (13)· patent assignee history
2011–2018Patents assigned to HOSONO HIDEO (12)· patent assignee history
2011–2012Based in Tokyo, JP· patent location history
2021Based in Meguro-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO INST TECH | 22 | 2008–2021 |
| CANON KK | 21 | 2008–2020 |
| KAMIYA TOSHIOself | 13 | 2011–2018 |
| HOSONO HIDEO | 12 | 2011–2018 |
| JAPAN SCIENCE & TECH AGENCY | 12 | 2006–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 14 | 2008–2012 |
| Kanagawa, JP | 12 | 2006–2020 |
| Tokyo, JP | 2 | 2011–2012 |
| Meguro-ku, JP | 1 | 2021 |