Inventor
HORNG-HUEI TSENG
Inventor
TW
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
F03GSpring, weight, inertia or like motors2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
12,563,821Semiconductor device and fabricating method thereof202612,402,392Semiconductor structure and manufacturing method thereof202512,389,669Enlarging spacer thickness by forming a dielectric layer over a recessed interlayer dielectric202512,272,595Removing polymer through treatment202512,237,417FinFET device and method of forming and monitoring quality of the same202512,211,842Method for manufacturing FinFETs by fin-recessing processes to form v-shaped concaves and rounded concaves into gate stacks202512,176,424FinFET device comprising plurality of dummy protruding features202412,166,040Integrated circuit and manufacturing method thereof202412,080,770Semiconductor device and method202411,935,889Fin structure and method of forming same through two-step etching processes202411,855,217Semiconductor device having a conductive contact in direct contact with an upper surface and a sidewall of a gate metal layer202311,784,185Source/drain regions in fin field effect transistors (FinFETs) and methods of forming same202311,776,853Semiconductor device and method of manufacture202311,749,603Interconnection structure, fabricating method thereof, and semiconductor device using the same202311,735,618Stacked grid design for improved optical performance and isolation202311,699,701Semiconductor device202311,682,625Interconnection structure, fabricating method thereof, and semiconductor device using the same202311,670,635Semiconductor device and method202311,637,204FinFET isolation structure202311,527,628Semiconductor device and method202211,522,084FinFET device and method of forming and monitoring quality of the same202211,522,061Semiconductor structure with protection layer and conductor extending through protection layer202211,508,849Semiconductor device and methods of manufacture202211,411,001Integrated circuit and manufacturing method thereof202211,404,376Interconnection structure, fabricating method thereof, and semiconductor device using the same202211,271,087Metal gate process for FinFET device improvement202211,251,289FinFET device comprising plurality of dummy protruding features202211,251,085Semiconductor structure and manufacturing method thereof202211,217,485Semiconductor device and method of manufacture202211,211,380Semiconductor structure and manufacturing method thereof202111,195,867High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof202111,177,178FinFETs and methods of forming FinFETs202111,171,040Removing polymer through treatment202111,164,788FinFETs and methods of forming FinFETs202111,145,510FinFET device over convex insulating structure2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 35 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 35 | 2021–2026 |