Inventor
Michael Xuefei Tang
Inventor
Bloomington, MN, US
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for30%
G11CStatic stores26%
H10BElectronic memory devices20%
B82YSpecific uses or applications of nanostructures5%
H01FMagnets5%
H10DInorganic electric semiconductor devices4%
G01RMeasuring electric variables3%
Y10TTechnical subjects covered by former us classification3%
E21BEarth or rock drilling1%
H01LSemiconductor devices1%
PatentTitleYear
9,567,850'System of monitoring rotational time of rotatable equipment'20178,940,577'Programmable metallization cells and methods of forming the same'20158,766,230'Non-volatile multi-bit memory with programmable capacitance'20148,711,608'Memory with separate read and write paths'20148,476,721'Magnet-assisted transistor devices'20138,466,525'Static magnetic field assisted resistive sense element'20138,466,524'Static magnetic field assisted resistive sense element'20138,456,903'Magnetic memory with porous non-conductive current confinement layer'20138,422,278'Memory with separate read and write paths'20138,399,908'Programmable metallization memory cells via selective channel forming'20138,400,823'Memory with separate read and write paths'20138,343,801'Method of forming a programmable metallization memory cell'20138,334,165'Programmable metallization memory cells via selective channel forming'20128,293,571'Programmable metallization cells and methods of forming the same'20128,288,753'Programmable resistive memory cell with oxide layer'20128,203,865'Non-volatile memory cell with non-ohmic selection layer'20128,197,953'Magnetic stack design'20128,183,654'Static magnetic field assisted resistive sense element'20128,097,902'Programmable metallization memory cells via selective channel forming'20128,058,646'Programmable resistive memory cell with oxide layer'20118,004,875'Current magnitude compensation for memory cells in a data storage array'20117,999,337'Static magnetic field assisted resistive sense element'20117,977,722'Non-volatile memory with programmable capacitance'20117,969,771'Semiconductor device with thermally coupled phase change layers'20117,948,045'Magnet-assisted transistor devices'20117,939,188'Magnetic stack design'20117,936,585'Non-volatile memory cell with non-ohmic selection layer'20117,881,098'Memory with separate read and write paths'20117,842,938'Programmable metallization cells and methods of forming the same'20107,826,181'Magnetic memory with porous non-conductive current confinement layer'20107,800,941'Magnetic memory with magnetic tunnel junction cell sets'20107,786,463'Non-volatile multi-bit memory with programmable capacitance'20107,750,386'Memory cells including nanoporous layers containing conductive material'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2015Patents assigned to SEAGATE TECHNOLOGY LLC (32)· patent assignee history
2010–2015Based in Bloomington, MN, US· patent location history
2011–2015Patents assigned to TANG MICHAEL XUEFEI (13)· patent assignee history
2011–2015Patents assigned to SUN MING (9)· patent assignee history
2012–2013Patents assigned to XI HAIWEN (10)· patent assignee history
2012–2014Patents assigned to XUE SONG S (7)· patent assignee history
2017Based in Houston, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEAGATE TECHNOLOGY LLC | 32 | 2010–2015 |
| TANG MICHAEL XUEFEIself | 13 | 2011–2015 |
| XI HAIWEN | 10 | 2012–2013 |
| SUN MING | 9 | 2011–2015 |
| XUE SONG S | 7 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Bloomington, Minnesota, US | 32 | 2010–2015 |
| Houston, Texas, US | 1 | 2017 |