Inventor

Thomas J. Miller

Inventor
Woodbury, MN, US

Overview

35→
Patents
1998–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers31%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light14%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01LSemiconductor devices6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
9,431,584'Light converting and emitting device with suppressed dark-line defects'20169,293,622'Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture'20169,053,959'Semiconductor light converting construction'20158,994,071'Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms'20158,835,963'Light converting and emitting device with minimal edge recombination'20148,710,533'Multicolored light converting LED with minimal absorption'20148,541,803'Cadmium-free re-emitting semiconductor construction'20138,488,641'II-VI MQW VSEL on a heat sink optically pumped by a GaN LD'20138,338,838'Down-converted light source with uniform wavelength emission'20128,148,741'Polychromatic LED\'s and related semiconductor devices'20128,148,742'Type II broadband or polychromatic LEDs'20127,902,543'Adapting short-wavelength LED\'s for polychromatic, broadband, or “white” emission'20117,902,542'Adapted LED device with re-emitting semiconductor construction'20117,745,814'Polychromatic LED\'s and related semiconductor devices'20107,737,430'Adapting short-wavelength LED\'s for polychromatic, broadband, or “white” emission'20107,719,015'Type II broadband or polychromatic LED\'s'20107,700,939'Adapting short-wavelength LED\'s for polychromatic, broadband, or “white” emission'20107,700,938'Adapting short-wavelength LED\'s for polychromatic, broadband, or “white” emission'20107,402,831'Adapting short-wavelength LED\'s for polychromatic, broadband, or “white” emission'20087,126,160'II-VI/III-V layered construction on InP substrate'20067,119,377'II-VI/III-V layered construction on InP substrate'20066,873,638'Laser diode chip with waveguide'20056,788,447'Off-chip matching circuit for electroabsorption optical modulator'20046,759,690'II-VI semiconductor device with BeTe buffer layer'20046,677,830'Broadband matching network for an electroabsorption optical modulator'20046,618,407'Uncooled universal laser module'20036,583,450'II-VI semiconductor device with BeTe buffer layer'20036,376,273'Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device'20026,090,637'Fabrication of II-VI semiconductor device with BeTe buffer layer'20006,058,123'Selective etch for II-VI semiconductors'20006,055,352'Optical wavelength optimization for high speed WDM transmission system'20005,879,962'III-V/II-VI Semiconductor interface fabrication method'19995,834,330'Selective etch method for II-VI semiconductors'19985,818,859'Be-containing II-VI blue-green laser diodes'19985,767,534'Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2004Based in Minneapolis, MN, US· patent location history
2000–2016Patents assigned to 3M INNOVATIVE PROPERTIES CO (27)· patent assignee history
2000–2004Based in Fleetwood, PA, US· patent location history
2004Based in Berks, GB· patent location history
2005–2016Based in Woodbury, MN, US· patent location history
2012–2016Patents assigned to HAASE MICHAEL A (11)· patent assignee history
2012–2016Patents assigned to MILLER THOMAS J (11)· patent assignee history
2012–2016Patents assigned to SUN XIAOGUANG (8)· patent assignee history
2012–2016Patents assigned to SMITH TERRY L (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
3M INNOVATIVE PROPERTIES CO272000–2016
HAASE MICHAEL A112012–2016
MILLER THOMAS Jself112012–2016
SUN XIAOGUANG82012–2016
SMITH TERRY L52012–2016
Locations
LocationPatentsSpan
Woodbury, Minnesota, US222005–2016
Minneapolis, Minnesota, US91998–2004
Fleetwood, Pennsylvania, US32000–2004
Berks, GB12004