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Inventor

Yoshihiko Tani

Inventor
Osaka, JP

Overview

18→
Patents
2003–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light19%
H01LSemiconductor devices17%
H10HInorganic light-emitting semiconductor devices having potential barriers17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
Y10TTechnical subjects covered by former us classification7%
C07DHeterocyclic compounds5%
G11BInformation storage based on relative movement between record carrier and transducer5%
H10KOrganic electric solid-state devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B05DProcesses for applying fluent materials to surfaces, in general2%
PatentTitleYear
11,107,996Organic thin film transistor, organic semiconductor film, compound, organic thin film transistor-forming composition, and method of manufacturing organic thin film transistor202111,081,651Organic semiconductor element, organic semiconductor composition, method of manufacturing organic semiconductor film, organic semiconductor film, and compound and polymer using the same202110,790,409Nitride semiconductor light-emitting element202010,218,152Semiconductor laser diode with low threshold current201910,084,111Nitride semiconductor light-emitting element20189,620,671'Nitride semiconductor light emitting element and method for manufacturing same'20179,318,645'Nitride semiconductor light-emitting element'20168,816,321'Nitride semiconductor light-emitting device and method for producing the same'20148,737,443'Nitride semiconductor laser device and wafer'20148,379,682'Nitride semiconductor laser chip and method of fabrication thereof'20138,358,675'Nitride semiconductor laser device and wafer'20137,939,433'Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source'20117,833,834'Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source'20107,691,729'Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source'20107,307,326'Light receiving element and light receiving device incorporating circuit and optical disk drive'20077,199,398'Nitride semiconductor light emitting device having electrode electrically separated into at least two regions'20077,098,489'Split type light receiving element and circuit-built-in light-receiving element and optical disk drive'20066,580,095'Circuit-containing photodetector, method of manufacturing the same, and optical device using circuit-containing photodetector'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2020Patents assigned to SHARP KK (16)· patent assignee history
2003–2007Based in Tenri, JP· patent location history
2010–2011Based in Mihara, JP· patent location history
2013–2014Patents assigned to TANI YOSHIHIKO (3)· patent assignee history
2013Patents assigned to KAWAKAMI TOSHIYUKI (2)· patent assignee history
2013Patents assigned to TANI KENTARO (2)· patent assignee history
2013–2019Based in Osaka, JP· patent location history
2018–2020Based in Sakai, JP· patent location history
2021Patents assigned to FUJIFILM CORP (2)· patent assignee history
2021Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK162003–2020
TANI YOSHIHIKOself32013–2014
FUJIFILM CORP22021
KAWAKAMI TOSHIYUKI22013
TANI KENTARO22013
Locations
LocationPatentsSpan
Osaka, JP72013–2019
Tenri, JP42003–2007
Mihara, JP32010–2011
Sakai, JP22018–2020
Kanagawa, JP12021