Inventor

SHING-YIH SHIH

Inventor
TW

Overview

74→
Patents
2021–2025
Patent span
Electricity
Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1041%
H01LSemiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10BElectronic memory devices4%
H10DInorganic electric semiconductor devices2%
G11CStatic stores1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
H01FMagnets1%
PatentTitleYear
12,482,775Semiconductor structure202512,456,703Semiconductor device structure including a bonding structure202512,456,630Method of manufacturing semiconductor structure having heat dissipation structure202512,431,410Semiconductor device with polymer liner and method for fabricating the same202512,381,167Semiconductor structure having vias with different dimensions202512,354,965Semiconductor device with redistribution structure and method for fabricating the same202512,347,730Method of manufacturing semiconductor structure having vias with different dimensions202512,315,796Method for preparing semiconductor device with composite passivation structure202512,315,774Semiconductor structure having heat dissipation structure202512,278,190Manufacturing method of semiconductor package structure having interconnections between dies202512,272,620Semiconductor structure having elastic member within via202512,272,651Semiconductor package structure having interconnections between dies and manufacturing method thereof202512,266,564Semiconductor device202512,205,912Semiconductor package structure and method for preparing the same202512,198,977Manufacturing method of semiconductor structure having elastic member within via202512,191,258Semiconductor device having integral alignment marks with decoupling features and method for fabricating the same202512,142,596Semiconductor structure and manufacturing method thereof202412,100,634Semiconductor device with re-fill layer202411,935,816Conductive feature with non-uniform critical dimension and method of manufacturing the same202411,935,831Semiconductor device with connecting structure and method for fabricating the same202411,901,344Manufacturing method of semiconductor package202411,901,334Microelectronic devices including embedded bridge interconnect structures202411,876,063Semiconductor package structure and method for preparing the same202411,876,079Method for fabricating semiconductor device with recessed pad layer202411,798,879Semiconductor device with composite passivation structure and method for preparing the same202311,765,882Method for fabricating semiconductor device202311,742,242Method for manufacturing through-silicon via with liner202311,735,540Apparatuses including dummy dice202311,735,499Semiconductor device with protection layers and method for fabricating the same202311,728,277Method for manufacturing semiconductor structure having via through bonded wafers202311,728,316Method for fabricating semiconductor device with heat dissipation features202311,710,693Wafer level package utilizing molded interposer202311,705,380Method for fabricating semiconductor device with protection layers202311,658,070Method of forming semiconductor structure202311,658,063Method for preparing semiconductor device structure with air gap202311,646,299Method of manufacturing a semiconductor package including a first sub-package stacked atop a second sub-package202311,646,292Method for fabricating semiconductor device with re-fill layer202311,640,948Microelectronic devices and apparatuses having a patterned surface structure202311,640,945Method of forming a semiconductor structure including forming a buffer structure over a metal layer202311,621,341Semiconductor device and method for fabricating the same202311,610,833Conductive feature with non-uniform critical dimension and method of manufacturing the same202311,605,612Method of manufacturing semiconductor package202311,605,596Semiconductor device having through silicon vias202311,587,901Semiconductor device with redistribution structure and method for fabricating the same202311,574,891Semiconductor device with heat dissipation unit and method for fabricating the same202311,521,916Method for fabricating semiconductor device with etch stop layer having greater thickness202211,502,025Semiconductor device with etch stop layer having greater thickness and method for fabricating the same202211,502,038Semiconductor structure having via through bonded wafers and manufacturing method thereof202211,476,200Semiconductor package structure having stacked die structure202211,469,173Method of manufacturing a semiconductor structure202211,469,210Semiconductor package with multiple coplanar interposers202211,462,453Semiconductor device with protection layers and method for fabricating the same202211,450,556Semiconductor structure202211,355,464Semiconductor device structure with bottle-shaped through silicon via and method for forming the same202211,342,333Semiconductor device202211,329,028Semiconductor device with recessed pad layer and method for fabricating the same202211,322,458Semiconductor structure including a first substrate and a second substrate and a buffer structure in the second substrate202211,315,869Semiconductor device with decoupling unit and method for fabricating the same202211,315,904Semiconductor assembly and method of manufacturing the same202211,309,312Semiconductor device202211,309,254Semiconductor device having through silicon vias and method of manufacturing the same202211,302,629Semiconductor device with composite passivation structure and method for preparing the same202211,302,608Semiconductor device with protection layers and method for fabricating the same202211,289,370Liner for through-silicon via202211,282,781Semiconductor device and method for fabricating the same202211,251,128Semiconductor device structure with air gap for reducing capacitive coupling202211,239,217Semiconductor package including a first sub-package stacked atop a second sub-package202211,222,811Semiconductor device structure with air gap and method for forming the same202211,217,525Semiconductor structure and method of forming the same202211,211,287Semiconductor device and method for fabricating the same202111,195,823Semiconductor package and manufacturing method thereof202111,189,523Semiconductor structure and fabrication method thereof202111,189,563Semiconductor structure and manufacturing method thereof202111,177,194Semiconductor device with interconnect structure and method for preparing the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2025Patents assigned to NANYA TECHNOLOGY CORP (69)· patent assignee history
2021–2025Based in TW· patent location history
2022–2024Patents assigned to MICRON TECHNOLOGY INC (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NANYA TECHNOLOGY CORP692021–2025
MICRON TECHNOLOGY INC52022–2024
Locations
LocationPatentsSpan
TW742021–2025