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Inventor

Wen Jan Lin

Inventor
Evanston, IL, US

Overview

2→
Patents
1999–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C01Bprimary
C01BNon-metallic elements14%
C01GCompounds containing metals not covered by subclasses c01d or c01f14%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds14%
C30BSingle-crystal growth14%
G01TMeasurement of nuclear or x-radiation14%
H10DInorganic electric semiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
PatentTitleYear
11,060,206Method for purifying an inorganic material using a tube having a bend between a first end and a second end of the tube20215,923,988'Two step thermal treatment procedure applied to polycide structures deposited using dichlorosilane as a reactant'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
1999Based in Si-Hu Town, Dzan-Hwa, TW· patent location history
2021Patents assigned to UNIV NORTHWESTERN (1)· patent assignee history
2021Based in Evanston, IL, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG11999
UNIV NORTHWESTERN12021
Locations
LocationPatentsSpan
Evanston, Illinois, US12021
Si-Hu Town, Dzan-Hwa, TW11999