Inventor

Shinpei Iijima

Inventor

Akishima, JP

Overview

32→

Patents

1988–2013

Patent span

Electricity

Primary field (CPC H)

Patents· 32 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices35%

H10BElectronic memory devices33%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

C23CCoating metallic material5%

H10NElectric solid-state devices not otherwise provided for1%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%

PatentTitleYear

8,492,814'Semiconductor device and method of manufacturing the same'2013 8,278,172'Semiconductor device and method of manufacturing the same'2012 7,811,895'Method of manufacturing a semiconductor device having a stacked capacitor'2010 7,700,942'Semiconductor device including an embedded contact plug'2010 7,667,257'Capacitor and process for manufacturing the same'2010 7,498,601'Phase-change memory device and method of manufacturing same'2009 7,382,014'Semiconductor device with capacitor suppressing leak current'2008 7,259,058'Fabricating method of semiconductor integrated circuits'2007 7,183,170'Manufacturing method of semiconductor device'2007 7,074,669'Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the same'2006 7,071,071'Method of manufacturing semiconductor device'2006 6,927,439'Semiconductor memory with strongly adhesive electrode'2005 6,781,172'Semiconductor device with adhesion-improvement capacitor and process for producing the device'2004 6,723,612'Semiconductor integrated circuit device and method of manufacturing the same'2004 6,724,034'Semiconductor integrated circuit device and manufacturing method which avoids oxidation of silicon plug during thermal treatment of capacitor insulating film'2004 6,720,603'CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER'2004 6,713,343'Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric'2004 6,664,157'Semiconductor integrated circuit device and the method of producing the same'2003 6,653,676'Integrated circuit capacitor'2003 6,649,465'Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes'2003 6,632,721'Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains'2003 6,576,946'Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate'2003 6,544,834'Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5)'2003 6,544,835'Method of forming a ruthenium film by CVD'2003 6,534,375'METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS'2003 6,423,593'Semiconductor integrated circuit device and process for manufacturing the same'2002 6,294,420'Integrated circuit capacitor'2001 6,235,572'Method of making a memory cell having two layered tantalum oxide films'2001 6,103,566'Method for manufacturing semiconductor integrated circuit device having a titanium electrode'2000 5,091,761'Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover'1992 4,989,056'Semiconductor capacitor'1991 4,785,342'Static random access memory having structure of first-, second- and third-level conductive films'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2005Patents assigned to HITACHI LTD (17)· patent assignee history

1988–2007Based in Akishima, JP· patent location history

2001–2013Based in Tokyo, JP· patent location history

2004Patents assigned to NEC CORP (2)· patent assignee history

2006–2013Patents assigned to ELPIDA MEMORY INC (10)· patent assignee history

2009Based in Chuo-ku, JP· patent location history

2012–2013Patents assigned to FUJIMOTO HIROYUKI (2)· patent assignee history

2012–2013Patents assigned to IIJIMA SHINPEI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	17	1988–2005
ELPIDA MEMORY INC	10	2006–2013
FUJIMOTO HIROYUKI	2	2012–2013
IIJIMA SHINPEIself	2	2012–2013
NEC CORP	2	2004

Locations

Location	Patents	Span
Akishima, JP	18	1988–2007
Tokyo, JP	13	2001–2013
Chuo-ku, JP	1	2009