Inventor
Junsoo KIM
Inventor
KR
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices22%
H01LSemiconductor devices19%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G06FElectric digital data processing7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G11CStatic stores6%
B82YSpecific uses or applications of nanostructures4%
G06NComputing arrangements based on specific computational models1%
H04LTransmission of digital information, e.g. telegraphic communication1%
PatentTitleYear
12,453,162Semiconductor devices and methods of manufacturing the same202512,405,814Method and system for efficient hardware mapping of generative giant artificial intelligence model202512,242,564Method and system for performing multi-device based inference for large language model202512,153,898Method and system for weight memory mapping for streaming operation of giant generative artifical intelligence hardware202412,147,746Method and system for verifying operation and data precision of hardware for artificial intelligence202412,127,394Semiconductor devices having buried gates202411,862,476Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material202411,843,688Method for dynamic feedback control based on homomorphic encryption which carries out unlimited arithmetic operations without bootstrapping202311,844,212Semiconductor memory devices202311,830,539Integrated circuit device including a word line driving circuit202311,785,761Semiconductor memory devices202311,710,788Semiconductor device and method of fabricating the same202311,626,409Semiconductor devices having buried gates202311,616,065Semiconductor memory devices202311,508,733Integrated circuit device with ion doped regions that provide dopant ions to gate dielectric film202211,482,277Integrated circuit device including a word line driving circuit202211,355,509Semiconductor memory devices202211,329,137Semiconductor devices and methods of manufacturing the same202211,195,950Semiconductor device with at least a portion of gate electrode enclosed by an insulating structure and method of fabricating the same202111,195,836Semiconductor memory devices2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to SAMSUNG ELECTRONICS CO LTD (15)· patent assignee history
2021–2025Based in KR· patent location history
2023Patents assigned to SAMSUNG ELECTRONIS CO LTD (1)· patent assignee history
2023Patents assigned to SEOUL NAT UNIV R&DB FOUNDATION (1)· patent assignee history
2023Patents assigned to SEOUL NATIONAL UNIV R&DBFOUNDATION (1)· patent assignee history
2024–2025Patents assigned to HYPERACCEL CO LTD (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 15 | 2021–2025 |
| HYPERACCEL CO LTD | 4 | 2024–2025 |
| SAMSUNG ELECTRONIS CO LTD | 1 | 2023 |
| SEOUL NAT UNIV R&DB FOUNDATION | 1 | 2023 |
| SEOUL NATIONAL UNIV R&DBFOUNDATION | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 20 | 2021–2025 |