Inventor

Tatsuo Hatano

Inventor
Nirasaki, JP

Overview

44→
Patents
1997–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01LSemiconductor devices9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H01JElectric discharge tubes or discharge lamps5%
B01DSeparation2%
H10DInorganic electric semiconductor devices2%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]2%
Y02PClimate change mitigation technologies in the production or processing of goods1%
PatentTitleYear
10,910,215Method of forming later insulating films for MTJ202110,325,801Mounting table system, substrate processing apparatus, and temperature control method201910,189,230Method for forming copper film201910,068,798Method and processing apparatus for performing pre-treatment to form copper wiring in recess formed in substrate20189,976,217Film forming method using reversible decomposition reaction20189,576,850'Method for manufacturing semiconductor device'20179,362,167'Method of supplying cobalt to recess'20169,121,094'Sputtering method and sputtering apparatus'20159,062,374'Method for film formation, apparatus for film formation, and computer-readable recording medium'20159,064,690'Method for forming Cu wiring'20158,999,841'Semiconductor device manufacturing method'20158,992,686'Mounting table structure, film forming apparatus and raw material recovery method'20158,859,422'Method of forming copper wiring and method and system for forming copper film'20148,408,025'Raw material recovery method and trapping mechanism for recovering raw material'20138,399,353'Methods of forming copper wiring and copper film, and film forming system'20138,349,283'Metal recovery method, metal recovery apparatus, gas exhaust system and film forming device using same'20138,277,889'Film formation method and film formation apparatus'20128,273,409'Method for film formation, apparatus for film formation, and computer-readable recording medium'20128,133,811'Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium'20128,129,271'Film forming method, film forming apparatus and storage medium'20128,029,873'Film deposition method and film deposition apparatus of metal film'20118,026,176'Film forming method, plasma film forming apparatus and storage medium'20117,879,399'CV method using metal carbonyl gas'20117,790,626'Plasma sputtering film deposition method and equipment'20107,491,430'Deposition method for forming a film including metal, nitrogen and carbon'20097,427,426'CVD method for forming metal film by using metal carbonyl gas'20087,344,754'Film formation method'20087,078,341'Method of depositing metal layers from metal-carbonyl precursors'20067,063,871'CVD process capable of reducing incubation time'20066,989,321'Low-pressure deposition of metal layers from metal-carbonyl precursors'20066,924,223'Method of forming a metal layer using an intermittent precursor gas flow process'20056,659,111'Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas'20036,169,032'CVD film formation method'20016,153,515'Method of forming multilayered film'20006,126,994'Liquid material supply apparatus and method'20006,080,444'CVD film forming method including annealing and film forming performed at substantially the same pressure'20005,989,345'Process-gas supply apparatus'19995,963,834'Method for forming a CVD film'19995,954,887'Cleaning processing method of a film forming apparatus'19995,880,526'Barrier metal layer'19995,709,757'Film forming and dry cleaning apparatus and method'19985,704,214'Apparatus for removing tramp materials and method therefor'19985,690,743'Liquid material supply apparatus and method'19975,595,606'Shower head and film forming apparatus using the same'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2021Patents assigned to TOKYO ELECTRON LTD (40)· patent assignee history
1997–2021Based in Nirasaki, JP· patent location history
1997–2019Based in Yamanashi, JP· patent location history
1999Based in Ryuoshimmachi, JP· patent location history
2005–2006Based in Ryuo-cho, JP· patent location history
2012–2015Patents assigned to HATANO TATSUO (12)· patent assignee history
2012–2015Patents assigned to GOMI ATSUSHI (9)· patent assignee history
2012–2015Patents assigned to HARA MASAMICHI (8)· patent assignee history
2012–2015Patents assigned to MIZUSAWA YASUSHI (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD401997–2021
HATANO TATSUOself122012–2015
GOMI ATSUSHI92012–2015
HARA MASAMICHI82012–2015
MIZUSAWA YASUSHI82012–2015
Locations
LocationPatentsSpan
Nirasaki, JP251997–2021
Yamanashi, JP151997–2019
Ryuo-cho, JP32005–2006
Ryuoshimmachi, JP11999